Thin film aluminum nitride surface acoustic wave resonators for quantum acoustodynamics

被引:3
|
作者
Jiang, Wenbing [1 ,2 ]
Chen, Junfeng [1 ,2 ]
Liu, Xiaoyu [1 ,2 ]
Niu, Zhengqi [1 ,3 ]
Liu, Kuang [1 ,2 ]
Peng, Wei [1 ,2 ]
Wang, Zhen [1 ,2 ]
Lin, Zhi-Rong [1 ,2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] ShanghaiTech Univ, Shanghai 201210, Peoples R China
基金
中国国家自然科学基金;
关键词
PLATFORM;
D O I
10.1063/5.0158083
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantum excitations of macroscopic surface acoustic waves (SAWs) have been tailored to control, communicate, and transduce stationary and flying quantum states. However, the limited lifetime of these hybrid quantum systems remains critical obstacles to extend their applications in quantum information processing. Here, we present potentials of thin film aluminum nitride to on-chip integrated phonons with superconducting qubits over previous bulk piezoelectric substrates. We have reported high-quality thin film GHz-SAW resonators with the highest internal quality factor Q(i) of 4:92 x 10(4) in the quantum regime. The internal losses of SAW resonators are systematically investigated by tuning the parameters of sample layout, power, and temperature. Our results manifest that SAWs on piezoelectric films are readily integrated with standard fabrication of Josephson junction quantum circuits and offer excellent acoustic platforms for high-coherence quantum acoustodynamics architectures.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] Switched Mode Thin Film Bulk Acoustic Wave Resonators
    Koohi, Milad Zolfagharloo
    Mortazawi, Amir
    2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 528 - 531
  • [22] PZT Thin Film Bulk Acoustic Wave Resonators and filters
    Kirby, PB
    Su, QX
    Komuro, E
    Zhang, Q
    Imura, M
    Whatmore, RW
    PROCEEDINGS OF THE 2001 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM & PDA EXHIBITION, 2001, : 687 - 694
  • [23] Sensitivity Features of Thin Film Plate Acoustic Wave Resonators
    Arapan, Lilia
    Anderas, Emil
    Katardjiev, Ilia
    Yantchev, Ventsislav
    IEEE SENSORS JOURNAL, 2011, 11 (12) : 3330 - 3331
  • [24] Surface acoustic wave properties of atomically flat-surface aluminum nitride epitaxial film on sapphire
    Uehara, K
    Aota, Y
    Shibata, T
    Kameda, S
    Nakase, H
    Isota, Y
    Tsubouchi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6B): : 4512 - 4515
  • [25] Mass sensitive thin film bulk acoustic wave resonators
    Loschonsky, M.
    Eisele, D.
    Reindl, L. M.
    PROCEEDINGS OF THE 2006 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM AND EXPOSITION, VOLS 1 AND 2, 2006, : 111 - +
  • [26] Intrinsically switchable thin film bulk acoustic wave resonators
    Vorobiev, A.
    Gevorgian, S.
    APPLIED PHYSICS LETTERS, 2014, 104 (22)
  • [27] Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators
    Kurz, Nicolas
    Ding, Anli
    Urban, Daniel F.
    Lu, Yuan
    Kirste, Lutz
    Feil, Niclas M.
    Zukauskaite, Agne
    Ambacher, Oliver
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (07)
  • [28] Aluminum nitride thin films on molybdenum/polyimide heterostructure for bulk acoustic resonators
    Chu, Futong
    Li, Chuan
    Wang, Zhenzhong
    Liu, Xingzhao
    Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2013, 42 (10): : 2023 - 2026
  • [29] Aluminum Nitride Thin Films on Molybdenum/Polyimide Heterostructure for Bulk Acoustic Resonators
    Chu Futong
    Li Chuan
    Wang Zhenzhong
    Liu Xingzhao
    RARE METAL MATERIALS AND ENGINEERING, 2013, 42 (10) : 2023 - 2026
  • [30] INTRINSICALLY SWITCHABLE FERROELECTRIC SCANDIUM ALUMINUM NITRIDE BULK ACOUSTIC WAVE RESONATORS
    Mo, Dicheng
    Rassay, Sushant
    Tabrizian, Roozbeh
    2021 21ST INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS), 2021, : 317 - 320