Sensing Beyond the Debye Length: Development of a 32 x 32 CMOS DNA Sensor Array

被引:2
|
作者
Tseng, Lien-Sing [1 ]
Lai, Po-Hsuan [1 ]
Yang, Chia-Min [2 ]
Lu, Michael S. -C. [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Dept Chem, Hsinchu 300, Taiwan
关键词
DNA; Sensors; Sensitivity; Frequency modulation; Sensor arrays; Electric potential; Probes; Chemical and biological sensors; complementary metal-oxide semiconductor (CMOS); debye length; deoxyribonucleic acid (DNA); extended-gate field effect transistor (EGFET); SCREENING LIMITATIONS;
D O I
10.1109/LSENS.2023.3249770
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter reports a large complementary metal-oxide semiconductor DNA array with more than 1000 sensors to demonstrate sensitive and wide-range detection under strong Debye charge screening. To this end, we electrically modulated the extended-gate field effect transistors (FETs) under study to extend the Debye length and compare results at different frequencies. Operation at higher frequencies showed better DNA sensitivity than at low frequencies. The array exhibited a pH sensitivity of 38 mV/pH in floating-gate potential changes. Detection of DNA hybridization showed a sensitivity of 19 mV/log(10)[DNA] in 1x phosphate buffered saline from 0.1 fM to 10 nM at 15 MHz.
引用
收藏
页数:4
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