Red InGaN nanowire LED with bulk active region directly grown on p-Si (111)

被引:14
|
作者
Pan, Xingchen [1 ]
Song, Jiaxun [1 ]
Hong, Hao [1 ]
Luo, Mingrui [1 ]
Notzel, Richard [1 ,2 ]
机构
[1] South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Peoples R China
[2] South China Normal Univ, Natl Ctr Int Res Green Optoelect, Guangzhou 510006, Peoples R China
关键词
LIGHT-EMITTING-DIODES; EMISSION;
D O I
10.1364/OE.486519
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A red nanowire LED with an InGaN bulk active region, directly grown on a p-Si (111) substrate, is demonstrated. The LED exhibits relatively good wavelength stability upon increasing injection current and narrowing of the linewidth without quantum confined Stark effect. Efficiency droop sets in at relatively high injection current. The output power and external quantum efficiency are 0.55 mW and 1.4% at 20 mA (20 A/cm2) with peak wavelength of 640 nm, reaching 2.3% at 70 mA with peak wavelength of 625 nm. The operation on the p-Si substrate results in large carrier injection currents due to a naturally formed tunnel junction at the n-GaN/p-Si interface and is ideal for device integration.
引用
收藏
页码:15772 / 15778
页数:7
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