Nitrogen-doped β-Ga2O3 vertical transistors with a threshold voltage of ≥1.3 V and a channel mobility of 100 cm2 V-1 s-1

被引：15

作者：

Wakimoto, Daiki ^{[1
]}

Lin, Chia-Hung ^{[1
]}

Thieu, Quang Tu ^{[1
]}

Miyamoto, Hironobu ^{[1
]}

Sasaki, Kohei ^{[1
]}

Kuramata, Akito ^{[1
]}

机构：

[1] Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan

来源：

APPLIED PHYSICS EXPRESS | 2023年 / 16卷 / 03期

关键词：

beta-Ga2O3; transistor; normally-off; nitrogen-doping; GA2O3; MOSFETS;

D O I：

10.35848/1882-0786/acc30e

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate high-performance normally-off multi-fin beta-Ga2O3 vertical transistors with a wide fin width from 1.0 to 2.0 mu m by using a nitrogen-doped beta-Ga2O3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was achieved with a threshold voltage of >= 1.3 V, a specific on-resistance of 2.9 m Omega.cm(2) and a current density of 760 A cm(-2) at a gate voltage of +10 V. The estimated MOS channel field effect mobility was similar to 100 cm(2) V-1 s(-1). These findings offer important insights on the development of Ga2O3 MOSFETs and show the great promise of Ga2O3 vertical power devices. (c) 2023 The Japan Society of Applied Physics

引用

页数：4

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