Non-stoichiometry and its implications for the properties of PMN-PT thin films

被引:1
|
作者
Trstenjak, Urska [1 ]
Daneu, Nina [1 ]
Belhadi, Jamal [1 ]
Samardzija, Zoran [2 ]
Matavz, Aleksander [3 ]
Bobnar, Vid [3 ,4 ]
Koster, Gertjan [1 ,5 ,6 ]
Spreitzer, Matjaz [1 ]
机构
[1] Jozef Stefan Inst, Adv Mat Dept, Jamova Cesta 39, Ljubljana 1000, Slovenia
[2] Jozef Stefan Inst, Dept Nanostruct Mat, Jamova Cesta 39, Ljubljana 1000, Slovenia
[3] Jozef Stefan Inst, Condensed Matter Phys Dept, Jamova Cesta 39, Ljubljana 1000, Slovenia
[4] Jozef Stefan Int Postgrad Sch, Jamova Cesta 39, Ljubljana 1000, Slovenia
[5] Univ Twente, Fac Sci & Technol, POB 217, NL-7500 AE Enschede, Netherlands
[6] Univ Twente, MESA Inst Nanotechnol, POB 217, NL-7500 AE Enschede, Netherlands
关键词
ELECTRICAL-PROPERTIES; MICROSTRUCTURE;
D O I
10.1039/d2tc04070k
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
0.67[Pb(Mg1/3Nb2/3)O-3]-0.33[PbTiO3] (PMN-33PT) epitaxial thin films were prepared by pulsed-laser deposition (PLD) using ceramic targets, enriched with PbO (and MgO). The phase composition and crystal structure were analyzed by high-resolution X-ray diffraction. Accurate chemical analysis of the thin films was carried out using wavelength-dispersive X-ray spectroscopy, which revealed that the target-substrate material transfer is not fully stoichiometric. The largest deviations were found for Pb and Mg content. Our results show that it is possible to effectively tune the stoichiometry of the films via the use of custom-made ceramic targets, emphasizing their advantage over single-crystal targets in PLD growth of complex metal oxides. The functional response of the films, however, is the result of complex interactions between the crystal structure, microstructure and chemical composition of the films. Our results show that the sample, prepared from the target with 20 mol% PbO excess, with the largest deviations from the nominal stoichiometry, exhibits the highest longitudinal piezoelectric coefficient.
引用
收藏
页码:1144 / 1154
页数:11
相关论文
共 50 条
  • [41] Influence of composition ratio on ferroelectric, magnetic and magnetoelectric properties of PMN-PT/CFO composite thin films
    Wang, Ao-pei
    Feng, Ming
    Wang, Wen
    Li, Hai-bo
    Zhao, Xue
    Xu, Hang
    Ke, Hua
    Zhou, Yu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (12) : 10164 - 10169
  • [42] Growth and properties of PMN-PT single crystals
    Jiang, X
    Tang, F
    Wang, JT
    Chen, TP
    PHYSICA C, 2001, 364 : 678 - 683
  • [43] Magnetoelectric properties of epitaxial Fe3O4 thin films on (011) PMN-PT piezosubstrates
    Tkach, Alexander
    Yazdi, Mehrdad Baghaie
    Foerster, Michael
    Buettner, Felix
    Vafaee, Mehran
    Fries, Maximilian
    Klaeui, Mathias
    PHYSICAL REVIEW B, 2015, 91 (02)
  • [44] Phenomenological model of dielectric properties for PMN-PT
    Mamin, R. F.
    Tayurskii, D. A.
    FERROELECTRICS, 2017, 509 (01) : 27 - 31
  • [45] Preparation and dielectric properties of PMN-PT ceramics
    Zhongshan Univ, Guangzhou, China
    J Mater Sci Lett, 18 (1567-1568):
  • [46] Preparation of PMN-PT films by laser ablation method
    Matsumuro, Y
    Oishi, Y
    Wu, WB
    Okuyama, M
    INTEGRATED FERROELECTRICS, 1998, 20 (1-4) : 95 - 105
  • [47] Effect of a niobium-doped PZT interfacial layer thickness on the properties of epitaxial PMN-PT thin films
    Boota, M.
    Houwman, E. P.
    Lanzara, G.
    Rijnders, G.
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (14)
  • [48] Microstructure and Electrical Properties of PMN-PT Thin Films Prepared by Oxygen Plasma Assisted Pulsed Laser Deposition
    He Yong
    Li Xiao-Min
    Gao Xiang-Dong
    Leng Xue
    Wang Wei
    JOURNAL OF INORGANIC MATERIALS, 2011, 26 (11) : 1227 - 1232
  • [49] Effects of ferroelectric/metal interface on the electric properties of PMN-PT thin films epitaxially grown on Si substrates
    Wang, W.
    Zhu, Q. X.
    Li, X. M.
    Yang, M. M.
    Gao, X. D.
    Zhao, X. Q.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (10) : 3782 - 3787
  • [50] Annealing temperature effects on PMN-PT thin film
    Detalle, M.
    Wang, G. S.
    Fribourg-Blanc, E.
    Remiens, D.
    FERROELECTRICS, 2008, 362 : 128 - 136