Valley dependent tunable Berry curvature related properties in heterojunction of graphene on WSe2

被引:0
|
作者
Aftab, Tayyaba [1 ]
机构
[1] Allama Iqbal Open Univ, Islamabad, Pakistan
关键词
valleys; Berry curvature; nernst effect; heterojunction; graphene; TMD;
D O I
10.1088/1402-4896/acfc83
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Heterojunction of graphene on WSe2 has strong spin-orbit coupling (SOC) in terms of valley Zeeman lambda(vz) and Rashba lambda(r) contributions. The interplay of SOC terms and lattice potential term are shown to tune the behavior of the heterojunction in terms of energy dispersion. The valley and spin degree of freedom are useful for the tuning and use of the heterojunction as a potential candidate in valleytronics and spintronics. We have shown Berry curvature, magnetic moment, orbital magnetization and Nernst coefficient to be valley, spin and SOC dependent. All these factors are shown to influence the behavior of the graphene on WSe2. We are able to tune and vary the behavior according to the needs by the interplay of these factors.
引用
收藏
页数:13
相关论文
共 50 条
  • [41] Selective Growth of WSe2 with Graphene Contacts
    Yu-Ting Lin
    Xin-Quan Zhang
    Po-Han Chen
    Chong-Chi Chi
    Erh-Chen Lin
    Jian-Guo Rong
    Chuenhou Ouyang
    Yung-Fu Chen
    Yi-Hsien Lee
    Nanoscale Research Letters, 15
  • [42] Magnetic control of valley pseudospin in monolayer WSe2
    Aivazian, G.
    Gong, Zhirui
    Jones, Aaron M.
    Chu, Rui-Lin
    Yan, J.
    Mandrus, D. G.
    Zhang, Chuanwei
    Cobden, David
    Yao, Wang
    Xu, X.
    NATURE PHYSICS, 2015, 11 (02) : 148 - 152
  • [43] Tunable Berry curvature and valley and spin Hall effect in bilayer MoS2
    Kormanyos, Andor
    Zolyomi, Viktor
    Fal'ko, Vladimir, I
    Burkard, Guido
    PHYSICAL REVIEW B, 2018, 98 (03)
  • [44] Tunable Berry curvature, valley and spin Hall effect in Bilayer MoS2
    Kormanyos, Andor
    Zolyomi, Viktor
    Fal'ko, Vladimir I.
    Burkard, Guido
    SPINTRONICS XII, 2019, 11090
  • [45] Effect of Phonons on Valley Depolarization in Monolayer WSe2
    Chellappan, Vijila
    Pang, Ai Lin Christina
    Sarkar, Soumya
    Ooi, Zi En
    Goh, Kuan Eng Johnson
    ELECTRONIC MATERIALS LETTERS, 2018, 14 (06) : 766 - 773
  • [46] Spin- and valley-coupled electronic states in monolayer WSe2 on bilayer graphene
    Sugawara, K.
    Sato, T.
    Tanaka, Y.
    Souma, S.
    Takahashi, T.
    APPLIED PHYSICS LETTERS, 2015, 107 (07)
  • [47] A tunable bilayer Hubbard model in twisted WSe2
    Xu, Yang
    Kang, Kaifei
    Watanabe, Kenji
    Taniguchi, Takashi
    Mak, Kin Fai
    Shan, Jie
    NATURE NANOTECHNOLOGY, 2022, 17 (09) : 934 - +
  • [48] Polarity Tunable Trionic Electroluminescence in Monolayer WSe2
    Wang, Junyong
    Lin, Fanrong
    Verzhbitskiy, Ivan
    Watanabe, Kenji
    Taniguchi, Takashi
    Martin, Jens
    Eda, Gold
    NANO LETTERS, 2019, 19 (10) : 7470 - 7475
  • [49] Gate Tunable Dark Trions in Monolayer WSe2
    Liu, Erfu
    van Baren, Jeremiah
    Lu, Zhengguang
    Altaiary, Mashael M.
    Taniguchi, Takashi
    Watanabe, Kenji
    Smirnov, Dmitry
    Lui, Chun Hung
    PHYSICAL REVIEW LETTERS, 2019, 123 (02)
  • [50] Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application
    Nourbakhsh, Amirhasan
    Zubair, Ahmad
    Dresselhaus, Mildred S.
    Palacios, Tomas
    NANO LETTERS, 2016, 16 (02) : 1359 - 1366