Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors

被引:8
|
作者
Lu, Peng [1 ]
Zhu, Maguang [2 ,3 ,4 ]
Zhao, Peixiong [5 ]
Fan, Chenwei [2 ,3 ]
Zhu, Huiping [1 ]
Gao, Jiantou [1 ]
Yang, Can [1 ]
Han, Zhengsheng [1 ]
Li, Bo [1 ]
Liu, Jie [5 ]
Zhang, Zhiyong [2 ,3 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Peking Univ, Key Lab Phys Chem Nanodevices, Beijing 100871, Peoples R China
[3] Peking Univ, Ctr Carbon based Elect, Sch Elect, Beijing 100871, Peoples R China
[4] Nanjing Univ, Sch Integrated Circuits, Nanjing 210023, Jiangsu, Peoples R China
[5] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
carbon nanotube; field effect transistor; displacement damage; heavy ion irradiation; degradation mechanism; INTEGRATED-CIRCUITS; RADIATION HARDNESS; DEFECTS;
D O I
10.1021/acsami.2c20005
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Recent advances in carbon nanotube (CNT)-based integrated circuits have shown their potential in deep space exploration. In this work, the mechanism governing the heavy-ion-induced displacement damage (DD) effect in semiconducting single-walled CNT field effect transistors (FETs), which is one of the factors limiting device robustness in space, was first and thoroughly investigated. CNT FETs irradiated by a Xe ion fluence of 1012 ions/ cm2 can maintain a high on/off current ratio, while transistors' performance failure is observed as the ion fluence increased to 5 x 1012 ions/cm2. Controllable experiments combined with numerical simulations revealed that the degradation mechanism changed as the nonionizing radiation energy built up. The trap generation in the gate dielectric, instead of the CNT channel, was identified as the dominating factor for the high-energy-radiation-induced device failure. Therefore, CNT FETs exhibited a >10x higher DD tolerance than that of Si devices, which was limited by the channel damage under irradiation. More importantly, the distinct failure mechanism determined that CNT FETs can maintain a high DD tolerance of 2.8 x 1013 MeV/g as the technology node scales down to 45 nm node, suggesting the potential of CNT-based VLSI for high-performance and high-robustness space applications.
引用
收藏
页码:10936 / 10946
页数:11
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