Comparative study of metal (Fe, Cu and Cr) doped ZnO nanostructure: Self-templated synthesis and application for photoelectrochemical water splitting

被引:1
|
作者
Salem, Moez [1 ]
Ghannam, H. [2 ]
Haouas, A. [3 ]
Almohammedi, A. [4 ]
Massoudi, I. [5 ,6 ]
机构
[1] Fac Sci Gabes, Dept Phys, Gabes 6079, Tunisia
[2] ERCMN, Mat Syst & Energy Engn Lab MaSEEL, UAE U01FST, Tanger 9000, Morocco
[3] Northern Border Univ, Fac Arts & Sci, Dept Chem, Ar Ar, Saudi Arabia
[4] Islamic Univ Madinah, Fac Sci, Dept Phys, Madinah 42351, Saudi Arabia
[5] Imam Abdulrahman Bin Faisal Univ, Basic & Appl Sci Res Ctr, POB 1982, Dammam 31441, Saudi Arabia
[6] Imam Abdulrahman Bin Faisal Univ, Coll Sci, Dept Phys, POB 1982, Dammam 31441, Saudi Arabia
关键词
ZnO; Metal; Structural properties; Photocurrent density; OPTICAL-PROPERTIES; HIERARCHICAL PHOTOCATALYSTS; MAGNETIC-PROPERTIES; NANORODS; CDO; OXIDE; UV;
D O I
10.1007/s43153-024-00452-0
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
A thorough examination was undertaken to evaluate ZnO nanostructured films doped with transition metals (M = Fe, Cu, and Cr) and their respective functional attributes, emphasizing their potential applications in optical technology and electronic components. Both pure and M-doped ZnO nanostructured films were synthesized through a co-precipitation and spin coating procedure. Structural investigations revealed that all films exhibited hexagonal wurtzite formation. XRD findings highlighted evident evolution in the lattice parameters of prepared doped samples in comparison to the pure ones. The introduction of M doping led to modifications in various crystalline parameters of the host ZnO layers. Photocurrent density measurements illustrated a range from 2.5 mu A/cm2 for pristine ZnO to 25, 8 and 19 mu A/cm2 for Fe, Cu, and Cr-doped samples, respectively, showcasing distinct variations in performance. Notably, this study represents the first reported comparative analysis of the functional properties of three dopants spin coated in ZnO films. These distinctive results position the coated layers as promising candidates for novel optoelectronic applications.
引用
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页数:12
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