Van der Waals Interlayer Coupling Induces Distinct Linear Dichroism in WSe2 Photodetectors

被引:12
|
作者
Wei, Zhenhua [1 ]
Zheng, Xiaoming [1 ,2 ,3 ]
Wei, Yuehua [4 ,5 ]
Zhang, Xiangzhe
Luo, Wei [1 ]
Liu, Jinxin [2 ]
Peng, Gang [1 ]
Huang, Han [6 ]
Lv, Tieyu [2 ]
Zhang, Xueao [2 ,7 ]
Deng, Chuyun [1 ]
机构
[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Peoples R China
[2] Xiamen Univ, Coll Phys Sci & Technol, Xiamen 361005, Peoples R China
[3] Hunan Univ Sci & Technol, Sch Phys & Elect Sci, Xiangtan 411201, Peoples R China
[4] Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Peoples R China
[5] Xiangtan Univ, Sch Phys & Optoelect, Xiangtan 411105, Hunan, Peoples R China
[6] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Supermicrostructure & Ultrafast Proc, Changsha 410083, Peoples R China
[7] Xiamen Univ, Jiujiang Res Inst, Jiujiang 332105, Peoples R China
基金
中国国家自然科学基金;
关键词
linear dichroism; polarization-sensitive photodetector; Raman anisotropy; vdW interlayer coupling; WSe2; CrOCl heterostructure;
D O I
10.1002/adom.202201962
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Driven by the unique linear dichroism feature of anisotropic two-dimensional (2D) materials, much attempt has been made to introduce artificial anisotropy into isotropic 2D materials to deliver polarization-sensitive performance. However, those methods have not been widely promoted because of technical limitations. This paper reports on the successful modulation to the structural symmetry of WSe2 through van der Waals (vdW) interlayer coupling. Correspondingly, both the polarized Raman and photoluminescence (PL) spectra of WSe2 in heterostructure exhibit periodic variation tendency. Similarly, direction-sensitive electronic transport has also been observed in WSe2/CrOCl heterostructure, and the conductance along armchair direction is approximate to 1.5 times of that along zigzag direction. As a functional illustration to the interlayer coupling induced linear dichroism, angle-dependent photodetection is conducted to WSe2/CrOCl device. With light irradiation at 532 nm, the device photocurrent along armchair direction is 1.27 times higher than that along zigzag direction. The abnormal linear dichroism of WSe2 in the study clearly proves that few-layer WSe2 on CrOCl flake has been entitled with artificial anisotropy. The interlayer coupling method is feasible and practical in 2D-material range, offering the possibility to develop polarization-dependent electronic, pyroelectric, and photoelectric devices from isotropic 2D materials.
引用
收藏
页数:10
相关论文
共 50 条
  • [41] Self-Powered Multicolor Broadband Photodetector Based on GaSe/WSe2//WSe2/BP Van Der Waals Heterostructure
    Chen, Jing
    Shan, Yabing
    Li, Ping
    Wu, Xiao-Ming
    Ren, Tian-Ling
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (08) : 3881 - 3886
  • [42] Seeking the Dirac cones in the MoS2/WSe2 van der Waals heterostructure
    Li, Qianze
    Tang, Liangpo
    Zhang, Caixin
    Wang, Dan
    Chen, Qin-Jun
    Feng, Ye-Xin
    Tang, Li-Ming
    Chen, Ke-Qiu
    APPLIED PHYSICS LETTERS, 2017, 111 (17)
  • [43] Indirect Excitons and Trions in MoSe2/WSe2 van der Waals Heterostructures
    Calman, E., V
    Fowler-Gerace, L. H.
    Choksy, D. J.
    Butov, L., V
    Nikonov, D. E.
    Young, I. A.
    Hu, S.
    Mishchenko, A.
    Geim, A. K.
    NANO LETTERS, 2020, 20 (03) : 1869 - 1875
  • [44] Self-Powered Te/Wse2 Van Der Waals Heterojunction Photodetectors With High Light On/Off Ratio And Fast Response
    He, Xu
    Zhang, Ling
    Hong, Wenting
    Wang, Bicheng
    Sun, Fapeng
    Hong, Zhaoan
    Cai, Qian
    Sun, Zhihua
    Liu, Wei
    ADVANCED OPTICAL MATERIALS, 2023, 11 (17)
  • [45] Van der Waals epitaxial growth of few layers WSe2 on GaP(111)B
    Chapuis, Niels
    Mahmoudi, Aymen
    Coinon, Christophe
    Troadec, David
    Vignaud, Dominique
    Patriarche, Gilles
    Roussel, Pascal
    Ouerghi, Abdelkarim
    Oehler, Fabrice
    Wallart, Xavier
    2D MATERIALS, 2024, 11 (03):
  • [46] Landau levels of bilayer graphene in a WSe2/bilayer graphene van der Waals heterostructure
    Chuang, Ya-Wen
    Li, Jing
    Fu, Hailong
    Watanabe, Kenji
    Taniguchi, Takashi
    Zhu, Jun
    PHYSICAL REVIEW B, 2019, 100 (19)
  • [47] Reconfigurable Diodes Based on Vertical WSe2 Transistors with van der Waals Bonded Contacts
    Avsar, Ahmet
    Marinov, Kolyo
    Marin, Enrique Gonzalez
    Iannaccone, Giuseppe
    Watanabe, Kenji
    Taniguchi, Takashi
    Fiori, Gianluca
    Kis, Andras
    ADVANCED MATERIALS, 2018, 30 (18)
  • [48] Spin filtering effect in all-van der Waals heterostructures with WSe2 barriers
    Zheng, Yuanhui
    Ma, Xiaolei
    Yan, Faguang
    Lin, Hailong
    Zhu, Wenkai
    Ji, Yang
    Wang, Runsheng
    Wang, Kaiyou
    NPJ 2D MATERIALS AND APPLICATIONS, 2022, 6 (01)
  • [49] Electronic Tuning in WSe2/Au via van der Waals Interface Twisting and Intercalation
    Wu, Qilong
    Tagani, Meysam Bagheri
    Zhang, Lijie
    Wang, Jing
    Xia, Yu
    Zhang, Li
    Xie, Sheng-Yi
    Tian, Yuan
    Yin, Long-Jing
    Zhang, Wen
    Rudenko, Alexander N.
    Wee, Andrew T. S.
    Wong, Ping Kwan Johnny
    Qin, Zhihui
    ACS NANO, 2022, 16 (04) : 6541 - 6551
  • [50] Delayed Core-Level Photoemission from the van der Waals Crystal WSe2
    Merschjohann, F.
    Neb, S.
    Bartz, P.
    Hensen, M.
    Strueber, C.
    Fiechter, S.
    Mueller, N.
    Pfeiffer, W.
    Heinzmann, U.
    ULTRAFAST PHENOMENA XIX, 2015, 162 : 68 - 71