Synthetic Antiferromagnetic Skyrmion based Oscillator as Leaky Integrate and Fire Neuron Device

被引:2
|
作者
Verma, Ravi Shankar [1 ]
Raj, Ravish Kumar [1 ]
Bindal, Namita [1 ]
Kaushik, Brajesh Kumar [1 ]
机构
[1] Indian Inst Technol Roorkee, Elect & Commun Engn Dept, Roorkee, Uttarakhand, India
关键词
D O I
10.1109/NANO58406.2023.10231164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spintronics is an emerging technology for data storage and neuromorphic commutating. In this field, magnetic skyrmion based devices are attractive due to their small size and low energy consumption. The synthetic antiferromagnetic (SAF) skyrmion is favorable alternative over the ferromagnetic (FM) skyrmion due to its inherent properties such as insensitivity towards external magnetic fields, negligible net demagnetizing fields, and no skyrmion Hall effect. It follows the straight path that prevents them from being annihilated at the boundaries nano- disk. In this work, a novel leaky-integrate- and-fire (LIF) neuron model that incorporates SAF skyrmion based spin torque nano oscillator is introduced for the first time. Furthermore, this proposed device has been analyzed at room temperature (RT) with thermal fluctuation for practical applications. This neuron model is a promising candidate to be utilized in developing energy efficient and high performance neuromorphic computing systems.
引用
收藏
页码:1025 / 1030
页数:6
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