Electrically controllable chiral phonons in ferroelectric materials

被引:2
|
作者
Chen, Hao [1 ,2 ]
Wu, Weikang [3 ]
Sun, Kangtai [4 ]
Yang, Shengyuan A. [5 ]
Zhang, Lifa [1 ]
机构
[1] Nanjing Normal Univ, Inst Phys Frontiers & Interdisciplinary Sci, Phonon Engn Res Ctr Jiangsu Prov, Ctr Quantum Transport & Thermal Energy Sci,Sch Phy, Nanjing 210023, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
[3] Shandong Univ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Minist Educ, Jinan 250061, Peoples R China
[4] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore
[5] Univ Macau, Inst Appl Phys & Mat Engn, Taipa 999078, Peoples R China
基金
国家重点研发计划; 中国博士后科学基金; 中国国家自然科学基金;
关键词
Chirality - Electric fields - Ferroelectric materials - Ferroelectricity - Magnetization reversal;
D O I
10.1063/5.0196731
中图分类号
O59 [应用物理学];
学科分类号
摘要
Chiral phonons have attracted increasing attention, as they play important roles in many different systems and processes. However, a method to control phonon chirality by external fields is still lacking. Here, we propose that in displacement-type ferroelectric materials, an external electric field can reverse the chirality of chiral phonons via ferroelectric switching. Using first-principles calculations, we demonstrate this point in the well-known two-dimensional ferroelectric In2Se3. This reversal may lead to a number of electrically switchable phenomena, such as chiral phonon induced magnetization, the phonon Hall effect, and possible topological interface chiral phonon modes at ferroelectric domain boundaries. Our work offers a way to control chiral phonons, which could be useful for the design and application of thermal or information devices based on them.
引用
收藏
页数:6
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