Perovskite Quantum Dot Light-Emitting Memcapacitor

Perovskite quantum dots (PQDs) are promising in the fieldof light-emittingdiodes (LEDs) due to their adjustable band gap, high photoluminescencequantum yield, and high color purity. However, ion migration is proneto occur in the device due to the structural instability of PQDs,resulting in the degradation of external quantum efficiency. In thiswork, we proposed a strategy to realize a perovskite quantum dot light-emittingmemcapacitor (PQLEM) so as to enhance the electroluminescent performanceof PQDs. By varying the pre-bias voltage and time, the ion distributionand trap density in the PQD film could be modified, thereby affectingthe capacitance value and luminous efficiency of the device. Underthe memcapacitive effect, the external quantum efficiency (EQE) ofthe device increases from an initial 2.81 to 7.95%. This work providesa route for achieving perovskite quantum dot light-emitting deviceswith high luminous efficiency.