Structural surface characteristics of aluminum-gallium nitride films on silicon carbide nanolayers on silicon

被引：0

作者：

Grashchenko, A. S. ^{[1
]}

Kukushkin, S. A. ^{[1
]}

Sharofidinov, Sh. Sh. ^{[2
]}

机构：

[1] Inst Problems Mech Engn RAS, St Petersburg, Russia

[2] Ioffe Inst, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 03期

关键词：

AFM; thin films; heterostructures; nano-SiC/Si; AlGaN;

D O I：

10.18721/JPM.163.238

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Experimental studies of the surface morphology of AlGaN films formed on nanometer-thick SiC layers synthesized on Si by atom substitution were performed. Structural characteristics of the surface of AlGaN/SiC/Si and AlGaN/AlN/SiC/Si heterostructures grown on Si with orientations (001), (011) and (111) were studied by atomic force microscopy. It is shown that the Si orientation has a significant influence on the surface morphology of AlGaN films. The surface roughness and characteristic dimensions of the AlGaN surface structure on nano-SiC/Si with and without an AlN buffer layer were measured. It is shown that the buffer AlN layer leads to a change in the surface structure dimensions of AlGaN layers.

引用

页码：223 / 227

页数：5

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