Spontaneous Hall effect in the magnetic Weyl semimetallic Eu2Ir2O7 (111) thin films

被引:3
|
作者
Ghosh, Mithun [1 ]
Samal, D. [2 ,3 ]
Kumar, P. S. Anil [1 ]
机构
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[2] Inst Phys, Sachivalaya Marg, Bhubaneswar 751005, India
[3] Homi Bhabha Natl Inst, Mumbai 400085, India
关键词
BERRY PHASE;
D O I
10.1063/5.0172127
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here, we have carried out a low-temperature magnetization and magnetotransport study on epitaxial antiferromagnetic Eu2Ir2O7 (111) thin films with an all-in-all-out/all-out-all-in spin structure to delve into the possibility of realizing spontaneous Hall effect that can provide strong experimental evidence for the existence of the Weyl semimetallic phase. The temperature-dependent resistivity on Eu2Ir2O7 (111) thin films indicates a semimetallic transition below 90 K and the existence of a correlated metallic state in the high-temperature regime (90-300 K). Magnetoresistance measurements suggest that at a low temperature (below 10 K), the all-in-all-out (AIAO) spin structure is stable enough against the applied magnetic field, whereas above 10 K, application of magnetic field causes field-induced modification of the spin structure and plastic domain deformation. Hall resistivity shows a spontaneous Hall effect (SHE) in the low-temperature semimetallic phase of Eu2Ir2O7 (111) thin films with minimal magnetization (AIAO/all-out-all-in spin structure). The observed SHE provides strong evidence for the emergent Weyl semimetallic phase in the (111) thin film geometry of antiferromagnetic Eu2Ir2O7.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Epitaxial stabilization of Sr3Ir2O7 thin films
    Yang, Junyi
    Hao, Lin
    Nanney, Peyton
    Noordhoek, Kyle
    Meyers, Derek
    Horak, Lukas
    Sanchez, Joshua
    Chu, Jiun-Haw
    Nelson, Christie
    Dean, Mark P. M.
    Liu, Jian
    APPLIED PHYSICS LETTERS, 2019, 114 (18)
  • [42] Investigating the ferroelectric field effect in thin NdBa2Cu3O7 films using the Hall effect
    Gariglio, S
    Ahn, CH
    Triscone, JM
    SUPERCONDUCTING AND RELATED OXIDES: PHYSICS AND NANOENGINEERING IV, 2000, 4058 : 314 - 320
  • [43] Anisotropic Hysteretic Hall Effect and Magnetic Control of Chiral Domains in the Chiral Spin States of Pr2Ir2O7
    Balicas, L.
    Nakatsuji, S.
    Machida, Y.
    Onoda, S.
    PHYSICAL REVIEW LETTERS, 2011, 106 (21)
  • [44] Giant Topological Hall Effect in Magnetic Weyl Metal Mn2Pd0.5Ir0.5Sn
    Bhattacharya, Arnab
    Sreeparvathy, P. C.
    Ahmed, Afsar
    Kurebayashi, Daichi
    Tretiakov, Oleg A.
    Satpati, Biswarup
    Duttagupta, Samik
    Alam, Aftab
    Das, I.
    ADVANCED FUNCTIONAL MATERIALS, 2025,
  • [45] Studies and implications of the Hall effect in superconducting and semiconducting YBa2Cu3O7-δ thin films
    Jahanzeb, A.
    Celik-Butler, Z.
    Shan, P.C.
    Butler, D.P.
    Journal of Applied Physics, 1995, 78 (11):
  • [46] Dielectric and ferroelectric properties of Bi2Ti2O7 thin films with (111) orientation
    Wang, Z
    Huang, J
    Wang, SW
    Xu, XH
    Hou, Y
    Wang, M
    Wang, H
    Wang, CL
    Hu, JF
    Wang, YG
    FERROELECTRICS, 2001, 252 (1-4) : 445 - 452
  • [47] Angle dependence of the Hall effect in HgBa2CaCu2O6 thin films
    Richter, H.
    Puica, I.
    Lang, W.
    Peruzzi, M.
    Durrell, J. H.
    Sturm, H.
    Pedarnig, J. D.
    Bäuerle, D.
    PHYSICAL REVIEW B, 2006, 73 (18):
  • [48] Growth of Pr2Ir2O7 thin films using solid phase epitaxy
    Ohtsuki, Takumi
    Tian, Zhaoming
    Halim, Mario
    Nakatsuji, Satoru
    Lippmaa, Mikk
    JOURNAL OF APPLIED PHYSICS, 2020, 127 (03)
  • [49] Evolution of Magnetic and Transport Properties in Pyrochlore Iridates A2Ir2O7(A=Y,Eu,Bi)
    LIU Hui
    LIANG Dandan
    CHEN Shiyun
    BIAN Jian
    FENG Yuan
    FANG Baolong
    Wuhan University Journal of Natural Sciences, 2017, 22 (03) : 215 - 222
  • [50] In-situ fabrication and transport properties of (111) Y2Ir2O7 epitaxial thin film
    Liu, Xiaoran
    Wen, Fangdi
    Karapetrova, E.
    Kim, J. -W.
    Ryan, P. J.
    Freeland, J. W.
    Terilli, M.
    Wu, T. -C.
    Kareev, M.
    Chakhalian, J.
    APPLIED PHYSICS LETTERS, 2020, 117 (04)