Multilevel resistive switching in MoOx/MoSxOy heterostructure memory

In recent years, extensive research has been conducted to develop various materials for fabricating numerous resistance states devices in order to meet the requirements of repeatable multilevel storage memory windows. In this study, we present a novel multilevel switching device comprising a MoOx/MoSxOy heterostructure layer vertically stacked with FTO bottom electrode and W top electrode, where the MoOx/MoSxOy heterostructure was prepared by oxidizing MoSxOy nanosheets. By adjusting the RESET-stop voltage, this MoOx/MoSxOy heterostructured device can be considered a five-level switching memory and achieves both analog and digital types of resistive switching behavior in the same device. The results suggest that MoOx/MoSxOy heterostructure-based resistive switching devices have the potential to be used in multilevel data storage resistive random access memory applications.