CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems

被引：11

作者：

Koroleva, Aleksandra A. ^{[1
]}

Kuzmichev, Dmitry S. ^{[1
]}

Kozodaev, Maxim G. ^{[1
]}

Zabrosaev, Ivan V. ^{[1
]}

Korostylev, Evgeny V. ^{[1
]}

Markeev, Andrey M. ^{[1
]}

机构：

[1] Moscow Inst Phys & Technol, Inst Per 9, Dolgoprudnyi 141700, Moscow, Russia

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 02期

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

SYNAPSE DEVICE; MEMORY;

D O I：

10.1063/5.0138218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Neuromorphic capabilities of a self-aligned complementary metal-oxide-semiconductor compatible W/WOx/HfO2/Ru cell in a 3D vertical memristive structure were investigated. We show that the device exhibits nonfilamentary forming-free multilevel resistive switching with gradual resistance change. In addition, the poor retention of a low resistance state allows integration of these structures in architectures that require short-term memory characteristics such as reservoir computing systems. The ability of the device to rely on the temporal sequence of the stream was tested with the digit recognition task. Since a WOx layer was obtained by thermal oxidization and HfO2 and Ru layers were grown by atomic layer deposition methods, the device is suitable for high-density systems with high connectivity within a neural network.

引用

页数：7

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