Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiOx/Au Resistive Memory Devices

被引：4

作者：

Roy, S. ^{[1
]}

Chakrabarti, B. ^{[1
]}

Bhattacharya, E. ^{[1
]}

机构：

[1] Indian Inst Technol Madras, Dept Elect Engn, Chennai 600036, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 10期

关键词：

Switches; Standards; Resistance; Electrodes; Silicon; Performance evaluation; Temperature measurement; Analog memory; in-memory computing; resistive memory; synapse; SILICON-OXIDE; RRAM; TITANIUM;

D O I：

10.1109/TED.2023.3305580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-oxide-based resistive random access memory (RRAM) synaptic devices typically suffer from high variability and strongly nonlinear conductance change. In this work, we demonstrate a SiOx-based synapse with low operating voltages, excellent uniformity in the switching operation, and analog tunability of conductance. The devices also exhibit linear and symmetric conductance update. We demonstrate that the enhanced uniformity and analog tunability can be attributed to an interfacial switching mechanism which can be controlled through careful optimization of the device operating conditions.

引用

页码：5421 / 5427

页数：7

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