High Energy Storage Performance of PZO/PTO Multilayers via Interface Engineering

被引：15
|
作者：
Zhang, Yuanyuan [1 ,2 ]
Chen, Qianqian [1 ]
Qi, Ruijuan [1 ]
Shen, Hao [1 ]
Sui, Fengrui [1 ]
Yang, Jing [1 ]
Bai, Wei [1 ]
Tang, Xiaodong [1 ]
Chen, Xuefeng [3 ]
Fu, Zhengqian [3 ]
Wang, Genshui [3 ]
Zhang, Shujun [2 ]
机构：
[1] East China Normal Univ, Sch Phys & Elect Sci, Dept Elect Sci, Key Lab Polar Mat & Devices,Minist Educ, Shanghai 200241, Peoples R China
[2] Univ Wollongong, Inst Superconducting & Elect Mat, Australian Inst Innovat Mat, Wollongong, NSW 2522, Australia
[3] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Peoples China, Shanghai 200050, Peoples R China
来源：
ACS APPLIED MATERIALS & INTERFACES | 2023年 / 15卷 / 05期
基金：
中国国家自然科学基金;
关键词：
multilayer; energy storage; antiferroelectric; interface engineering; PZO; PTO; THIN-FILMS; DENSITY; SUPERLATTICES; DISLOCATIONS; STABILITY; PBZRO3; CAPACITORS; PBTIO3;
D O I：
10.1021/acsami.2c21202
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n with a maximum recoverable energy storage density of 36.4 J/cm3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.
引用
收藏
页码：7157 / 7164
页数：8
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