Laser Microengineering in SnO2 microwire array films for high performance ultraviolet photodetectors

被引:2
|
作者
Chen, Weilong [1 ,2 ]
Wang, Linqiang [1 ]
Liu, Haiwen [1 ]
Wu, You [1 ,2 ]
Zhai, Rui [1 ,2 ]
Chen, Kaishen [1 ]
Zhao, Zhuan [1 ,2 ]
Zhang, Chengyun [1 ,3 ]
Pan, Shusheng [1 ,2 ,3 ]
机构
[1] Guangzhou Univ, Sch Phys & Mat Sci, Guangzhou 510006, Peoples R China
[2] Guangzhou Univ, Sino Singapore Guangzhou Knowledge City, Res Ctr Adv Informat Mat CAIM, Huangpu Res & Grad Sch, Guangzhou 510555, Peoples R China
[3] Dept Educ Guangdong Prov, Key Lab Si Based Informat Mat & Devices & Integrat, Guangzhou, Peoples R China
基金
中国国家自然科学基金;
关键词
Wide-band-gap metal oxide semiconductor; Tin oxide thin film; Ultraviolet photodetector; Femtosecond laser engineering; FEMTOSECOND LASER; NANOWIRES; SURFACE; TRANSPARENT;
D O I
10.1016/j.ceramint.2023.11.086
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Tin oxide (SnO2) has emerged as promising applications in ultraviolet photodetectors (UV PDs) due to its prominent photoelectronic properties. However, the slow photoresponse of UV PDs based on SnO2 films limits the application. In this work, the absorbing intermediate layer-assisted femtosecond (fs) laser microprocessing technology is employed to engineer the SnO2 microwire arrays (MWAs) thin film. The obtained UV PDs based on SnO2 MWA films exhibit enhanced responsivity and ultrafast response in the UV region. Under light irradiation with a wavelength of 365 nm, the optimized responsivity and rising/decaying time reach 1.62 A/W and 0.89/2.3 ms with the bias voltage of 5 V. The results demonstrate that the SnO2 MWA film can serve as a high-performance photodetector in the UV region.
引用
收藏
页码:3388 / 3396
页数:9
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