A 272 GHz InP HBT Direct-Conversion Transmitter with 14.1 dBm Output Power

被引：0
|
作者：
Soylu, Utku [1 ]
Alizadeh, Amirreza [1 ]
Ahmed, Ahmed S. H. [1 ]
Seo, Munkyo [2 ]
Rodwell, Mark J. W. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Sungkyunkwan Univ, Dept Elect & Comp Engn, Seoul, South Korea
来源：
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年
关键词：
direct-conversion; double heterojunction bipolar transistor (DHBT); H-band; high efficiency; indium phosphide (InP); millimeter wave;
D O I：
10.23919/EuMIC58042.2023.10288921
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a fully integrated 272 GHz direct-conversion transmitter in 250nm InP HBT technology. The transmitter has more than 18 dB conversion gain over 264-285 GHz, consumes 1.6W, and has 14.1dBm output power at 272 GHz. Its -3 dB bandwidth is 18 GHz, while its -6 dB bandwidth is 36 GHz. An internal 8:1 active frequency multiplier generates the local oscillator. To the authors' knowledge, the IC demonstrates record saturated output power for an integrated transmitter operating near 272 GHz.
引用
收藏
页码：141 / 144
页数：4
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