Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy

被引：1
|
作者：
Baranov, A. I. [1 ,2 ]
Uvarov, A. V. [1 ,2 ]
Maksimova, A. A. [1 ,2 ]
Vyacheslavova, E. A. [1 ,2 ]
Kalyuzhnyy, N. A. [3 ]
Mintairov, S. A. [3 ]
Salii, R. A. [3 ]
Yakovlev, G. E. [2 ]
Zubkov, V. I. [2 ]
Gudovskikh, A. S. [1 ,2 ]
机构：
[1] St Petersburg Natl Res Acad Univ, Russian Acad Sci, Alferov Fed State Budgetary Inst Higher Educ & Sci, Khlopin Str 8-3-A, St Petersburg 194021, Russia
[2] St Petersburg State Electrotech Univ LETI, St Petersburg, Russia
[3] Ioffe Inst, St Petersburg, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2023年 / 49卷 / SUPPL 3期
关键词：
quantum well; capacitance-voltage profiling; electrochemical profiling;
D O I：
10.1134/S1063785023900649
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21, 0.30 and 0.93 eV.
引用
收藏
页码：S163 / S167
页数：5
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