Average Temperature Determination of AlGaN/GaN HEMT Utilizing Pinch-Off Voltage Biasing

被引：0
|
作者：
Florovic, M. [1 ]
Kovac, J. [1 ]
Chvala, A. [1 ]
Jacquet, J. -c. [2 ]
Delage, S. L. [2 ]
机构：
[1] Slovak Univ Technol Bratislava, Inst Elect & Photon, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia
[2] III V Lab, F-91460 Marcoussis, France
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 11期
关键词：
AlGaN; average temperature; field effect transistor (FET); gallium nitride (GaN); HEMT; power dissipation; thermal model;
D O I：
10.1109/TED.2023.3317811
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, pinch-off voltage biasing was utilized for the first time to determine the average channel temperature of the AlGaN/GaN HEMT, which made it possible to exclude the device's electrical parameters dependence in the linear operating mode. The theoretical part is focused on the thermal model with temperature-dependent thermal resistance utilization for active area average temperature determination of the HEMT under quasi-static operation. The experimental part deals with drain-to-source current comparison utilizing quasi-static and pinch-off voltage-biased short-pulse output I-V characteristics and additional isothermal trapping phenomena determined from the threshold voltage shift. The appropriate use and combination of methods for the active area average temperature determination utilizing constant isothermal saturation current or short-pulse current were discussed.
引用
收藏
页码：5803 / 5806
页数：4
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