An ultra low-power double-node-upsets hardened latch design

被引:0
|
作者
Chen, Zhuo [1 ,2 ]
Xie, Yuqiao [1 ,2 ]
Liang, Jingfeng [1 ,2 ]
Bi, Dawei [1 ]
Hu, Zhiyuan [1 ]
Zhang, Zhengxuan [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai, Peoples R China
[2] Univ Chinese Acad Sci, Beijing, Peoples R China
关键词
double node upsets (DNU); hardened latchsingle event effect (SEE); radiation hardened by design (RHBD); LOW-COST; ROBUST; CHARGE; COLLECTION;
D O I
10.1002/cta.3990
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a novel low-cost, double-node upset (DNU) tolerant latch aiming at nourishing the lack of these devices in the state of the art was presented, especially featuring high reliability while maintaining a low-cost profile. The proposed latch is based on a low-cost single event double-node upset tolerant latch and also provides self-recoverability against double-node-upsets. The latch uses clock-controlled DICE (Dual-interlocked storage cell) cell and CE(C-Elements) cell to tolerate double-node-upsets fully. The Simulation waveforms and analysis results show that the proposed latch can maintain the correct output in any case of DNU. In addition, under the premise of high radiation tolerance, the minimum improvement of the area-power-delay product (APDP) of the proposed low-power double-node-upsets hardened latch (LPDHL) is 16.60%, compared with the latest DNU tolerant latch on the literature. In order to reduce the influence of double-node upset (DNU) on latches in single-event effects (SEE) and solve the problem of high power of the other latches, a new radiation hardened by design (RHBD), namely low-power double-node-upsets hardened latch (LPDHL) based on dual-interlocked storage cell (DICE) is proposed. image
引用
收藏
页码:5374 / 5389
页数:16
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