Bipolar spin-filtering and giant magnetoresistance effect in spin-semiconducting zigzag graphene nanoribbons

被引:14
|
作者
Han, Ziqi [1 ,2 ,3 ]
Hao, Hua [4 ]
Zheng, Xiaohong [2 ,3 ]
Zeng, Zhi [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, HFIPS, Hefei 230031, Peoples R China
[2] Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Peoples R China
[3] Nanjing Forestry Univ, Coll Informat Sci & Technol, Nanjing 210037, Peoples R China
[4] Hangzhou Normal Univ, Sch Phys, Hangzhou 311121, Peoples R China
基金
中国国家自然科学基金;
关键词
EDGE STATES; TRANSPORT; 1ST-PRINCIPLES;
D O I
10.1039/d2cp05834k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Spintronics is one of the main topics in condensed matter physics, in which half-metallicity and giant magnetoresistance are two important objects to achieve. In this work, we study the spin dependent transport properties of zigzag graphene nanoribbons (ZGNR) with asymmetric edge hydrogenation and different magnetic configurations using the non-equilibrium Green's function method combined with density functional calculations. Our results show that when the magnetic configurations of the electrodes change from parallel to antiparallel, the currents in the tunnel junction change substantially, resulting in a high conductance state and a low conductance state, with the tunnel magnetoresistance (TMR) ratio larger than 1 x 10(5)% achieved. In addition, in the parallel magnetic configurations, an ideal bipolar spin filtering effect is observed, making it flexible to switch the spin polarity of current by reversing the bias direction. All these features originate from the spin semiconducting behavior of the asymmetrically hydrogenated ZGNRs. The findings suggest that asymmetric edge hydrogenation provides an important way to construct multi-functional spintronic devices with ZGNRs.
引用
收藏
页码:6461 / 6466
页数:6
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