Enhancing capacitance of dielectric Si-oxide film by inserting indium-tin-oxide interlayer

被引：0

作者：

Yen, Tzu-Hsuan ^{[1
]}

Chou, Chia-Yueh ^{[1
]}

Li, Bao-Jhen ^{[1
]}

Liu, Cheng-Yi ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2023年 / 56卷 / 33期

关键词：

capacitance; sputtering; indium-tin-oxide; interlayer; dielectric constant; silicon oxide; CHEMICAL-VAPOR-DEPOSITION; SILICON DIOXIDE FILMS; MIM CAPACITOR; INFRARED-SPECTROSCOPY; THIN-FILMS; CONSTANT; TEMPERATURE;

D O I：

10.1088/1361-6463/acb8c2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two parallel-plate capacitors, Cu/Si-oxide/Cu (MIM) and Cu/Si-oxide/indium-tin-oxide/Cu (MIM-ITO), were fabricated. The capacitance of MIM-ITO structure (1365.5 pF) was measured to be much larger than MIM structure (442 pF) by two folds. The ITO interlayer enhances the 'edge effect' and results in non-stoichiometric Si2O3 phase formation in Si-oxide film. Si2O3 tetrahedrons present strong spontaneous dipoles, which result in an additional net polarization in the Si-oxide film under an applied electric field. With TEM images, (222)-preferred ITO crystalline phase was observed at the Si-oxide/ITO interface and served as the growth seed layer for Si2O3-contained Si-oxide film.

引用

页数：6

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