Enhancing capacitance of dielectric Si-oxide film by inserting indium-tin-oxide interlayer

被引：0
|
作者：
Yen, Tzu-Hsuan [1 ]
Chou, Chia-Yueh [1 ]
Li, Bao-Jhen [1 ]
Liu, Cheng-Yi [1 ]
机构：
[1] Natl Cent Univ, Dept Chem Engn & Mat Engn, Jhongli 32001, Taiwan
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2023年 / 56卷 / 33期
关键词：
capacitance; sputtering; indium-tin-oxide; interlayer; dielectric constant; silicon oxide; CHEMICAL-VAPOR-DEPOSITION; SILICON DIOXIDE FILMS; MIM CAPACITOR; INFRARED-SPECTROSCOPY; THIN-FILMS; CONSTANT; TEMPERATURE;
D O I：
10.1088/1361-6463/acb8c2
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two parallel-plate capacitors, Cu/Si-oxide/Cu (MIM) and Cu/Si-oxide/indium-tin-oxide/Cu (MIM-ITO), were fabricated. The capacitance of MIM-ITO structure (1365.5 pF) was measured to be much larger than MIM structure (442 pF) by two folds. The ITO interlayer enhances the 'edge effect' and results in non-stoichiometric Si2O3 phase formation in Si-oxide film. Si2O3 tetrahedrons present strong spontaneous dipoles, which result in an additional net polarization in the Si-oxide film under an applied electric field. With TEM images, (222)-preferred ITO crystalline phase was observed at the Si-oxide/ITO interface and served as the growth seed layer for Si2O3-contained Si-oxide film.
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页数：6
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