Hall Effect in Doped Mott-Hubbard Insulator

被引：1

作者：

Kuchinskii, E. Z. ^{[1
]}

Kuleeva, N. A. ^{[1
]}

Sadovskii, M. V. ^{[1
]}

Khomskii, D. I. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Electrophys, Ural Branch, Ekaterinburg 620016, Russia

[2] Univ Cologne, Phys Inst 2, D-50937 Cologne, Germany

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2023年 / 136卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

MEAN-FIELD THEORY;

D O I：

10.1134/S1063776123030020

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present theoretical analysis of Hall effect in doped Mott-Hubbard insulator, considered as a prototype of cuprate superconductor. We consider the standard Hubbard model within DMFT approximation. As a typical case we consider the partially filled (hole doping) lower Hubbard band. We calculate the doping dependence of both the Hall coefficient and Hall number and determine the value of carrier concentration, where Hall effect changes its sign. We obtain a significant dependence of Hall effect parameters on temperature. Disorder effects are taken into account in a qualitative way. We also perform a comparison of our theoretical results with some known experiments on doping dependence of Hall number in the normal state of YBCO and Nd-LSCO, demonstrating rather satisfactory agreement of theory and experiment. Thus the doping dependence of Hall effect parameters obtained within Hubbard model can be considered as an alternative to a popular model of the quantum critical point.

引用

页码：368 / 377

页数：10

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