High fracture toughness in van der Waals-layered MoTe2: Disappearance of stress singularity

被引:2
|
作者
Hirakata, Hiroyuki [1 ]
Akiyoshi, Masao [1 ,2 ]
Masuda, Ryoichi [1 ]
Shimada, Takahiro [1 ]
机构
[1] Kyoto Univ, Dept Mech Engn & Sci, Nishikyo Ku, Kyoto 6158540, Japan
[2] Mitsubishi Electr Corp, Wadasaki Cho, Hyogo Ku, Kobe, Hyogo 6520854, Japan
关键词
Fracture toughness; Stress singularity; 2D materials; van der Waals-layered materials; MoTe2; STRENGTH;
D O I
10.1016/j.engfracmech.2022.108974
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
In this study, we demonstrated that van der Waals-layered MoTe2 , where two-dimensional atomic layers are closely laminated by weak interactions, has higher fracture toughness in out-of-plane cracks than that in in-plane cracks owing to structural anisotropy. In situ electron microscopy fracture toughness tests were performed on micro-sized specimens. The apparent fracture toughness of the out-of-plane crack based on the continuum assumption was approximately twice that of the in-plane crack. In the out-of-plane crack specimen, as the loading progressed, inter -laminar slip occurred between layers, and this discrete nature caused the stress singularity to disappear, leading to high fracture toughness.
引用
收藏
页数:19
相关论文
共 50 条
  • [11] High-temperature magnetostructural transition in van der Waals-layered α-MoCl3
    McGuire, Michael A.
    Yan, Jiaqiang
    Lampen-Kelley, Paula
    May, Andrew F.
    Cooper, Valentino R.
    Lindsay, Lucas
    Puretzky, Alexander
    Liang, Liangbo
    Santosh, K. C.
    Cakmak, Ercan
    Calder, Stuart
    Sales, Brian C.
    PHYSICAL REVIEW MATERIALS, 2017, 1 (06):
  • [12] High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions
    Luo, Hao
    Wang, Bolun
    Wang, Enze
    Wang, Xuewen
    Sun, Yufei
    Liu, Kai
    CRYSTALS, 2019, 9 (06):
  • [13] High-Performance Photovoltaic Detector Based on MoTe2/MoS2 Van der Waals Heterostructure
    Chen, Yan
    Wang, Xudong
    Wu, Guangjian
    Wang, Zhen
    Fang, Hehai
    Lin, Tie
    Sun, Shuo
    Shen, Hong
    Hu, Weida
    Wang, Jianlu
    Sun, Jinglan
    Meng, Xiangjian
    Chu, Junhao
    SMALL, 2018, 14 (09)
  • [14] Van der Waals epitaxy of three-dimensional CdS on the two-dimensional layered substrate MoTe2(0001)
    Loher, T.
    Tomm, Y.
    Pettenkofer, C.
    Jaegermann, W.
    Applied Physics Letters, 1994, 65 (05)
  • [15] VAN-DER-WAALS EPITAXY OF 3-DIMENSIONAL CDS ON THE 2-DIMENSIONAL LAYERED SUBSTRATE MOTE2(0001)
    LOHER, T
    PETTENKOFER, C
    JAEGERMANN, W
    APPLIED PHYSICS LETTERS, 1994, 65 (05) : 555 - 557
  • [16] Unconventional Charge-to-Spin Conversion in Graphene/MoTe2 van der Waals Heterostructures
    Ontoso, Nerea
    Safeer, C. K.
    Herling, Franz
    Ingla-Aynes, Josep
    Yang, Haozhe
    Chi, Zhendong
    Martin-Garcia, Beatriz
    Robredo, Inigo
    Vergniory, Maia G.
    de Juan, Fernando
    Calvo, M. Reyes
    Hueso, Luis E.
    Casanova, Felix
    PHYSICAL REVIEW APPLIED, 2023, 19 (01)
  • [17] Anomalous Dimensionality-Driven Phase Transition of MoTe2 in Van der Waals Heterostructure
    Ryu, Huije
    Lee, Yangjin
    Kim, Hyun-Jung
    Kang, Seoung-Hun
    Kang, Yoongu
    Kim, Kangwon
    Kim, Jungcheol
    Janicek, Blanka E.
    Watanabe, Kenji
    Taniguchi, Takashi
    Huang, Pinshane Y.
    Cheong, Hyeonsik
    Jung, In-Ho
    Kim, Kwanpyo
    Son, Young-Woo
    Lee, Gwan-Hyoung
    ADVANCED FUNCTIONAL MATERIALS, 2021, 31 (51)
  • [18] Origins of heat transport anisotropy in MoTe2 and other bulk van der Waals materials
    Li, Hongkun
    Pandey, Tribhuwan
    Jiang, Yi
    Gu, Xiaokun
    Lindsay, Lucas
    Koh, Yee Kan
    MATERIALS TODAY PHYSICS, 2023, 37
  • [19] Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures
    Pan, Yuchuan
    Liu, Xiaochi
    Yang, Junqiang
    Yoo, Won Jong
    Sun, Jian
    ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (45) : 54294 - 54300
  • [20] The band alignments modulation of g–MoTe2/WTe2 van der Waals heterostructures
    Honglin Li
    Yuting Cui
    Tao Wang
    Haijun Luo
    Applied Physics A, 2019, 125