Scalable and cost-effective synthesis of flexible paper-based Indium doped SnS photodetector in the VIS-NIR range

Broadband light detection is one of the growing needs for technological advancement. Very few materials are available that can entertain the whole Ultraviolet to infrared light range. Devices based on these materials are in high demand. 2D layered materials are promising materials as their bandgap can be easily modified by effective cation/anion doping or forming hetero-structure with base materials which effectively increases the overall photodetection properties. SnS is one of the members of the 2D layered material family. Here in the present work, we carried doping of In element in pristine SnS and investigated improvement in photodetection properties. We studied different doping concentrations of In such as 2, 5, 6, 7, 8, 10 and 12 %. All these pristine and In doped SnS materials were synthesized using a simple hydrothermal approach. Paper-based flexible, large-area Photodetector devices were fabricated from as-synthesized materials. As-fabricated photodetectors show excellent photo response in NIR to the visible region with a maximum responsivity value of 18.2 mA/W and a specific detectivity of 1.07x1010 Jones. We also investigated the flexibility and durability of as-prepared devices which suggest no change in photocurrent after several bending cycles.