Reduction of vacancy defects induced by thermal annealing in β-Ga2O3 epilayer

被引:7
|
作者
Fan, Teng [1 ,2 ]
Tang, Ning [1 ,2 ,3 ,4 ]
Wei, Jiaqi [1 ,2 ]
Zhang, Shixiong [1 ,2 ]
Sun, Zhenhao [1 ,2 ]
Li, Guoping [1 ,2 ]
Jiang, Jiayang [1 ,2 ]
Fu, Lei [1 ,2 ]
Zhang, Yunfan [1 ,2 ]
Yuan, Ye [5 ]
Rong, Xin [1 ,2 ]
Ge, Weikun [1 ,2 ]
Wang, Xinqiang [1 ,2 ,3 ,4 ]
Shen, Bo [1 ,2 ,3 ,4 ]
机构
[1] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Frontiers Sci Ctr Nanooptoelectron, Sch Phys, Beijing 100871, Peoples R China
[3] Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Jiangsu, Peoples R China
[4] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
来源
MICRO AND NANOSTRUCTURES | 2023年 / 176卷
基金
中国国家自然科学基金;
关键词
beta-Ga2O3; Thermal annealing; Vacancy defects; GaO4; tetrahedra; PHOTOLUMINESCENCE; FABRICATION; PRESSURE; GA2O3; FILMS; BETA;
D O I
10.1016/j.micrna.2023.207525
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The effects of annealing in oxygen atmosphere of beta-Ga2O3 epilayers were investigated by X-ray photoelectron spectroscopy, photoluminescence and Fourier-transform infrared spectroscopy. The increasing proportions of Ga3+ and O-L (lattice oxygen) signifies the reduction of V-O as the annealing temperature rising. The variations of the photoluminescence emissions demonstrate the improvement of the crystal quality and reduction of V-O(1), V-O(2) and V-Ga. V-O and V-Ga are filled with oxygen atoms and gallium atoms after annealing, mainly attributed to the bonds con-structions of Ga (1)-O (1) and Ga (1)-O (2) in GaO4 tetrahedra. These results offer detailed in-formation and guidelines for removing intrinsic point defects in beta-Ga2O3.
引用
收藏
页数:9
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