A novel (1-x)MgZrTa2O8-xMgTa2O6 microwave dielectric composite ceramic with near-zero temperature coefficient

被引:2
|
作者
Jiang, Xi [1 ]
Guo, Xinrui [1 ]
Zhang, Yun [1 ]
Ding, Shihua [1 ]
Song, Tianxiu [1 ]
机构
[1] Xihua Univ, Sch Mat Sci & Engn, Chengdu 610039, Peoples R China
基金
中国国家自然科学基金;
关键词
CRYSTAL-STRUCTURE; MG; TI;
D O I
10.1007/s10854-023-10067-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, (1-x)MgZrTa2O8-xMgTa(2)O(6) (0.5 <= x <= 0.8) microwave dielectric ceramics made by solid-state sintering were examined to obtain near-zero resonant frequency temperature coefficient. The effects of MgTa2O6 on the phase transitions, microstructure, and microwave dielectric properties for (1-x)MgZrTa2O8-xMgTa(2)O(6) ceramics were investigated. With the increase of MgTa2O6 content, the composition transformed from single phase MgZrTa2O8 solid solution to MgZrTa2O8 and MgTa2O6 coexistence. As MgTa2O6 ceramic increased, the epsilon(r) was gradually higher, but the Qxf value kept decreasing. The changes in microwave dielectric properties were explained by the secondary phase, the relative density, Raman shift and FWHM value. Results revealed that the desirable dielectric properties were obtained by sintering at 1450 degrees C with x = 0.75: epsilon(r) = 24.88, Qxf= 26,823 GHz, and tau(f)=-0.54 ppm/degrees C. The highest Qxf (similar to 32,518 GHz) was obtained by sintering at 1475 degrees C with x = 0.5 in the study.
引用
收藏
页数:12
相关论文
共 50 条
  • [21] Microwave dielectric properties of (1-x)Mg(Sn0.05Ti0.95)O3-x(Ca0.8Sr0.2)TiO3-y wt% ZnNb2O6 ceramics with near-zero temperature coefficient
    Xie, Wentao
    Zhou, Hongqing
    Zhu, Haikui
    Zhao, Jianxin
    Ren, Luchao
    Huang, Fang
    Qian, Lei
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (06) : 3515 - 3520
  • [22] A TiSnNbTaGa2O12 high-entropy microwave dielectric ceramic with rutile structure and near-zero τf
    Xiao, Lei
    Deng, Lianwen
    Li, Yingxiang
    Qing, Zhenjun
    Xi, Yecheng
    Zhu, Jiahui
    Peng, Sen
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2024, 44 (01) : 277 - 283
  • [23] Microwave dielectric properties of low-temperature-fired LiAlO2-Li2TiO3 composite ceramics with near-zero temperature coefficient
    Xie, Xiaodong
    Su, Hua
    Chen, Jiawang
    Zuo, Huaizhi
    Tang, Xiaoli
    Li, Yuanxun
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (20) : 17771 - 17776
  • [24] Crystal structure and microwave dielectric properties of novel (1-x)ZnZrNb2O8-xTiO2 ceramics
    Lyu, Xiao-Song
    Li, Ling-Xia
    Zhang, Shuai
    Sun, Hao
    Zhang, Bo-Wen
    Li, Jiang-Teng
    Du, Ming-Kun
    MATERIALS LETTERS, 2016, 171 : 129 - 132
  • [25] Microwave dielectric ceramics (1-x)ZnNb2O6-xZnTa2O6 with high quality factors
    Zhang, YC
    Yue, ZX
    Yang, XH
    Zhao, JQ
    Gui, ZL
    Li, LT
    RARE METAL MATERIALS AND ENGINEERING, 2003, 32 : 572 - 574
  • [26] Microwave dielectric properties of temperature stable CoTiNb2O8-CoNb2O6 composite ceramics
    Zhang, Yun
    Zhang, Yingchun
    Xiang, Maoqiao
    MATERIALS LETTERS, 2016, 178 : 175 - 177
  • [27] Low loss and middle permittivity of (1-x) Ca4La2Ti5O17-xNdAlO3 dielectric resonators with near-zero temperature coefficient of the resonant frequency
    Di, Jie-chang
    Chen, Guo-hua
    Hou, Mei-zhen
    Yuan, Chang-lai
    Xu, Hua-rui
    Zhou, Chang-rong
    JOURNAL OF MATERIALS SCIENCE, 2012, 47 (05) : 2271 - 2277
  • [28] Microwave dielectric properties of low-temperature-fired LiAlO2–Li2TiO3 composite ceramics with near-zero temperature coefficient
    Xiaodong Xie
    Hua Su
    Jiawang Chen
    Huaizhi Zuo
    Xiaoli Tang
    Yuanxun Li
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 17771 - 17776
  • [29] Phase evolution and near-zero shrinkage in BaAl2Si2O8 low-permittivity microwave dielectric ceramics
    Lei, Wen
    Ang, Ran
    Wang, Xiao-Chuan
    Lu, Wen-Zhong
    MATERIALS RESEARCH BULLETIN, 2014, 50 : 235 - 239
  • [30] Microwave dielectric properties of (1-x)BiNbO4-xCaNb2O6 ceramics with CuV2O6
    Kim, ES
    Ryu, JH
    Park, MS
    Kim, DW
    Chang, HS
    FERROELECTRICS, 2001, 257 (1-4) : 175 - 180