The novel preparation method of thermochromic VO2 films with a low phase transition temperature by thermal oxidation of V-Mo cosputtered alloy films
被引:8
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作者:
Zhu, Maodong
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机构:
Anhui Polytech Univ, Sch Math Phys & Finance, Wuhu 241000, Peoples R ChinaAnhui Polytech Univ, Sch Math Phys & Finance, Wuhu 241000, Peoples R China
Zhu, Maodong
[1
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Zhang, Dongping
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Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R ChinaAnhui Polytech Univ, Sch Math Phys & Finance, Wuhu 241000, Peoples R China
Zhang, Dongping
[2
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Qi, Hongji
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机构:
Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R ChinaAnhui Polytech Univ, Sch Math Phys & Finance, Wuhu 241000, Peoples R China
Qi, Hongji
[3
]
机构:
[1] Anhui Polytech Univ, Sch Math Phys & Finance, Wuhu 241000, Peoples R China
[2] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518060, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
Vanadium dioxide (VO2) has been studied extensively for its unique insulator-metal transition characteristics and potential applications in thermochromic smart windows, switching devices, and infrared detectors. However, how to balance the metal-insulator transition temperature, luminous transmittance (Tlum) and solar modulation ability (Delta Tsol) of VO2 thin films remains a challenge. In this work, high-quality thermochromic VO2 thin films were prepared by a two-step method of magnetron sputtering and thermal oxidation annealing. Metallic and alloyed V-Mo layers were first deposited by direct-current reactive magnetron sputtering, and then a thermal oxidation annealing process was used to obtain pure and Mo-doped VO2 thin films. The Mo content in the films was regulated by changing the sputtering power of the vanadium target, and the effect of Mo doping on the crystallinity, microstructure, phase transition temperature and optical properties of VO2 thin films was studied. The shift of the VO2(011) peak to a lower 2 theta angle in the XRD patterns showed that Mo was successfully diffused into vanadium dioxide films. The phase transition temperatures were decreased continuously from 57.4 to 32.7 degrees C by decreasing the sputtering power of vanadium. The thinner Mo-doped VO2 thin films showed higher luminous transmittance and lower transition temperature. Our results were shown to be an innovative prepa-ration method to fabricate thermochromic VO2 films with a low phase transition temperature, balanced luminous transmittance and solar modulation ability by thermal oxidation of V-Mo cosputtered alloy films.
机构:
Pusan Natl Univ, Dept Phys, Busan 46241, South KoreaPusan Natl Univ, Dept Phys, Busan 46241, South Korea
Yang, Donghyuk
Kim, Hyegyeong
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Pusan Natl Univ, Dept Phys, Busan 46241, South KoreaPusan Natl Univ, Dept Phys, Busan 46241, South Korea
Kim, Hyegyeong
Kim, Jiwoong
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Pusan Natl Univ, Dept Phys, Busan 46241, South KoreaPusan Natl Univ, Dept Phys, Busan 46241, South Korea
Kim, Jiwoong
Song, Sehwan
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Pusan Natl Univ, Dept Phys, Busan 46241, South KoreaPusan Natl Univ, Dept Phys, Busan 46241, South Korea
Song, Sehwan
Choi, Kyoung Soon
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Korea Basic Sci Inst, Busan Ctr, Busan 46742, South KoreaPusan Natl Univ, Dept Phys, Busan 46241, South Korea
Choi, Kyoung Soon
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Bae, Jong-Seong
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Lee, Jouhahn
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Lee, Jaekwang
Lee, Yunsang
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Soongsil Univ, Dept Phys, Seoul 06978, South KoreaPusan Natl Univ, Dept Phys, Busan 46241, South Korea
Lee, Yunsang
Yan, Jiafeng
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机构:
Hanyang Univ, Dept Phys, Seoul 04763, South Korea
Hanyang Univ, Inst High Pressure, Seoul 04763, South KoreaPusan Natl Univ, Dept Phys, Busan 46241, South Korea
Yan, Jiafeng
Kim, Jaeyong
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Hanyang Univ, Dept Phys, Seoul 04763, South Korea
Hanyang Univ, Inst High Pressure, Seoul 04763, South KoreaPusan Natl Univ, Dept Phys, Busan 46241, South Korea
机构:
Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Wu, Jialiang
Tong, Liping
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Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Tong, Liping
Wang, Huifen
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Shanghai Inst Spacecraft Equipment, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Wang, Huifen
Liu, Gang
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Shanghai Inst Spacecraft Equipment, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Liu, Gang
Fu, Xuecheng
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Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Ctr Adv Elect Mat & Devices, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China
Fu, Xuecheng
Fan, Tongxiang
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Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R ChinaShanghai Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Met Matrix Composites, Shanghai 200240, Peoples R China