Strong In-Plane Optoelectronic Anisotropy and Polarization Sensitivity in Low-Symmetry 2D Violet Phosphorus

被引:19
|
作者
Chen, Weilin [1 ,2 ]
Chen, An [1 ,2 ]
Zhang, Ruan [1 ,2 ]
Zeng, Jianmin [2 ]
Zhang, Lihui [3 ]
Gu, Mengyue [4 ]
Wang, Chaofan [5 ]
Huang, Mingyuan [5 ]
Guo, Yanbo [1 ,2 ]
Duan, Hongxiao [1 ,2 ]
Hu, Chunguang [6 ]
Shen, Wanfu [6 ]
Niu, Baoxin [6 ]
Watanabe, Kenji [7 ]
Taniguchi, Takashi [7 ]
Zhang, Jinying [4 ]
Li, Jinjin [1 ]
Cai, Xinghan [1 ]
Liu, Gang [1 ]
机构
[1] Shanghai Jiao Tong Univ, Natl Key Lab Adv Micro & Nano Manufacture Technol, Shanghai 200240, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Elect Informat & Elect Engn, Dept Micro Nano Elect, Shanghai 200240, Peoples R China
[3] Xian Thermal Power Res Inst Co Ltd, Xian 710054, Peoples R China
[4] Xi An Jiao Tong Univ, Sch Elect Engn, Xian 710049, Peoples R China
[5] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
[6] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrumen, Tianjin 300072, Peoples R China
[7] Natl Inst Mat Sci, Tsukuba 3050044, Japan
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
low symmetry; 2D violet phosphorus; van derWaals phototransistor; in-plane optoelectronic anisotropy; polarization sensitivity; PHOTODETECTOR; PERFORMANCE; EFFICIENT; MOTE2;
D O I
10.1021/acs.nanolett.3c02951
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Anisotropic optoelectronics based on low-symmetry two-dimensional (2D) materials hold immense potential for enabling multidimensional visual perception with improved miniaturization and integration capabilities, which has attracted extensive interest in optical communication, high-gain photoswitching circuits, and polarization imaging fields. However, the reported in-plane anisotropic photocurrent and polarized dichroic ratios are limited, hindering the achievement of high-performance anisotropic optoelectronics. In this study, we introduce novel low-symmetry violet phosphorus (VP) with a unique tubular cross-linked structure into this realm, and the corresponding anisotropic optical and optoelectronic properties are investigated both experimentally and theoretically for the first time. Remarkably, our prepared VP-based van der Waals phototransistor exhibits significant optoelectronic anisotropies with a giant in-plane anisotropic photocurrent ratio exceeding 10 and a comparable polarized dichroic ratio of 2.16, which is superior to those of most reported 2D counterparts. Our findings establish VP as an exceptional candidate for anisotropic optoelectronics, paving the way for future multifunctional applications.
引用
收藏
页码:10821 / 10831
页数:11
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