Van der Waals Integrated LiNbO3/WS2 for High-Performance UV-Vis-NIR Photodetection

被引:29
|
作者
Liang, Xijie [1 ]
Guan, Heyuan [1 ]
Luo, Kaiwen [1 ,2 ]
He, Zhigang [1 ]
Liang, Aijie [1 ]
Zhang, Weina [1 ]
Lin, Qijing [1 ]
Yang, Zuoxin [1 ]
Zhang, Haoran [1 ]
Xu, Cheng [1 ]
Xie, Hanrong [1 ]
Liu, Fengli [1 ]
Ma, Fengkai [1 ]
Yang, Tiefeng [1 ]
Lu, Huihui [1 ,2 ]
机构
[1] Jinan Univ, Guangdong Prov Key Lab Opt Fiber Sensing & Commun, Guangzhou 510632, Peoples R China
[2] Jinan Univ, Key Lab Optoelect Informat & Sensing Technol Guang, Guangzhou 510632, Peoples R China
基金
中国国家自然科学基金;
关键词
ferroelectric polarization; lithium niobate; photodetectors; polarization-sensitive; WS2; LITHIUM-NIOBATE; ULTRAHIGH-RESPONSIVITY; DEEP-ULTRAVIOLET; GENERATION; WS2; CRYSTALS;
D O I
10.1002/lpor.202300286
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Lithium niobate (LN) is widely used in various optoelectronic systems due to its structural anisotropy and ferroelectric feature, which is one of the most essential platforms for next-generation integrated optoelectronics. However, the insulating and optically transparent characteristics of LN have greatly limited the application in photodetection. Here, a high-performance LN/WS2 based photodetector is achieved through a van der Waals integration strategy in which the pyroelectric property of LN and the moderate bandgap of WS2 are well combined. Upon light illumination, the light induced carriers in WS2 would increase and the pyroelectric charges of LN will cross the interfacial gap and asymmetrically inject into the WS2, creating an n(-)/n(+) homojunction, thus improving the on-state current. Under dark conditions, the sudden removal of the laser would introduce an instantaneous enhancement of polarization in the LN lattice, leading to an improved confinement on the remaining carriers in WS2, achieving a lower dark current. In this regard, the configurated device acquires a high on/off ratio more than 10(4) under zero bias, which represents the best among all the reported LN-based photodetectors. This work realizes the complementary integration of 2D materials and ferroelectric LN and provides a feasible way for high-performance photodetectors based on the LN platform.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] Boosting the UV-vis-NIR Photodetection Performance of MoS2 through the Cavity Enhancement Effect and Bulk Heterojunction Strategy
    Li, Xiaolong
    Wan, Jundi
    Tang, Yulu
    Wang, Chenyu
    Zhang, Yahui
    Lv, Dongjun
    Guo, Mingyuan
    Ma, Yongning
    Yang, Yuhao
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (22) : 29003 - 29015
  • [22] Alternating BiI3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection
    Mu, Haoran
    Zhuang, Renzhong
    Cui, Nan
    Cai, Songhua
    Yu, Wenzhi
    Yuan, Jian
    Zhang, Jingni
    Liu, Hao
    Mei, Luyao
    He, Xiaoyue
    Mei, Zengxia
    Zhang, Guangyu
    Bao, Qiaoliang
    Lin, Shenghuang
    ACS NANO, 2023, 17 (21) : 21317 - 21327
  • [23] Hydrothermally Synthesized WS2-QDs/Si (0-D/3-D) Vertical Heterojunction for an Efficient Wide Spectral (UV-Vis-NIR) Photodetection
    Goswami Y.P.
    Gupta P.K.
    Pandey A.
    IEEE Transactions on Electron Devices, 2024, 71 (05) : 3084 - 3089
  • [24] Self-Assembly High-Performance UV-vis-NIR Broadband β-In2Se3/Si Photodetector Array for Weak Signal Detection
    Zheng, Zhaoqiang
    Yao, Jiandong
    Wang, Bing
    Yang, Yibin
    Yang, Guowei
    Li, Jingbo
    ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (50) : 43830 - 43837
  • [25] Type-II WS2/AsP van der Waals heterojunctions with high rectification ratio and high detectivity
    Jia, Runmeng
    Guo, Tingting
    Wang, Yifei
    Lin, Yuhai
    Zhu, Cheng
    Farhan, Ahmad
    Xu, Jing
    Ruan, Banqin
    Zhang, Aidi
    Chen, Xiang
    Li, Zhi
    Song, Xiufeng
    Zeng, Haibo
    JOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (38) : 15454 - 15462
  • [26] Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection
    Li, Zihan
    Yan, Yongda
    Xu, Cheng Yan
    Li, Yang
    Geng, Yanquan
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (21) : 27640 - 27649
  • [27] Robust Interlayer Exciton in WS2/MoSe2 van der Waals Heterostructure under High Pressure
    Ma, Xiaoli
    Fu, Shaohua
    Ding, Jianwei
    Liu, Meng
    Bian, Ang
    Hong, Fang
    Sun, Jiatao
    Zhang, Xiaoxian
    Yu, Xiaohui
    He, Dawei
    NANO LETTERS, 2021, 21 (19) : 8035 - 8042
  • [28] Broadband Photodetector Based on FePS3/WS2 van der Waals Type II Heterostructure
    Cao, Xinyu
    Yan, Shaohua
    Li, Zhiteng
    Fang, Zhenghui
    Wang, Lin
    Liu, Xiaofeng
    Chen, Zhengwei
    Lei, Hechang
    Zhang, Xiao
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 14 (50): : 11529 - 11535
  • [29] High Performance Van der Waals Graphene-WS2-Si Heterostructure Photodetector
    Xiao, Rubin
    Lan, Changyong
    Li, Yongjun
    Zeng, Cheng
    He, Tianying
    Wang, Shuai
    Li, Chun
    Yin, Yi
    Liu, Yong
    ADVANCED MATERIALS INTERFACES, 2019, 6 (24)
  • [30] Magnetic proximity effect in ultrathin freestanding WS2/LaMnO3 van der Waals heterostructures
    Lu, Qinwen
    Lei, Xunyong
    Fu, Jun
    Wang, Qing
    Mao, Xiaoyu
    Cheng, Long
    Zhai, Xiaofang
    Zeng, Hualing
    AIP ADVANCES, 2023, 13 (05)