Photomultiplicative and High External Quantum Efficient Energy Conversion Device for Paper Electronics

被引:8
|
作者
Verma, Arpit [1 ]
Chaudhary, Priyanka [1 ]
Singh, Anshika [2 ]
Tripathi, Ravi Kant [3 ]
Yadav, Bal Chandra [1 ]
Chauhan, Pratima [2 ]
机构
[1] Babasaheb Bhimrao Ambedkar Univ, Dept Phys, Nanomat & Sensors Res Lab, Lucknow 226025, Uttar Pradesh, India
[2] Univ Allahabad, Dept Phys, Adv Nanomat Res Lab, UGC Ctr Adv Studies, Prayagraj 211002, India
[3] Lal Bahadur Shastri Smarak Post Grad Coll, Dept Phys, Maharajganj 273161, UP, India
关键词
Bi2S3; nanorods; paper electronics; polyaniline; energy devices; EQE; HIGH-PERFORMANCE; PHOTODETECTORS; ULTRAVIOLET; LIGHT; FABRICATION; NANOSHEETS; GAIN;
D O I
10.1021/acsaelm.3c00673
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this research, we present an innovative paper electronics device featuring Bi2S3 nanorods (NRs) seamlessly integrated into a chemically oxidized p-TSA-conjugated polyaniline matrix. This innovative combination aims to achieve remarkable external quantum efficiency for energy conversion. The incorporation of Bi2S3 nanorods into the polyaniline matrix facilitates the creation of interconnected microlevel junctions between these materials, all of which are assembled on a flexible and biodegradable cellulose paper substrate to form the device. As per XPS analysis, Bi 4f(7/ 2) and Bi 4f(5/ 2) levels were identified at binding energies of 156.88 and 161.98 eV, respectively, indicating the doublet splitting of Bi atom. Furthermore, the Tauc plot, derived from UV-visible absorption analysis, revealed that the optical band gap of Bi2S3-polyaniline stood at 2.64 eV. This metallopolymeric energy device shows a large photoresponsivity of 16.85 A/W with a sufficiently high external quantum efficiency (EQE) of 3.93 x 103% at an extremely low drift potential of 0.1 V and small optical power of 50 mu W/cm(2). Additionally, the device exhibits notable responsiveness under flexibility without the use of any binder in the device fabrication process. Capacitance measurements, trap depth energy, and trap density with respect to frequency were carried out to better substantiate the photoconduction phenomenon.
引用
收藏
页码:4899 / 4914
页数:16
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