Smart electromagnetic interference shields based on flexible PEDOT:PSS/Bi2Te3 films
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作者:
Al-Asbahi, B. A.
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King Saud Univ, Coll Sci, Dept Phys & Astron, POB 2455, Riyadh 11451, Saudi ArabiaKing Saud Univ, Coll Sci, Dept Phys & Astron, POB 2455, Riyadh 11451, Saudi Arabia
Al-Asbahi, B. A.
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Qaid, S. M. H.
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King Saud Univ, Coll Sci, Dept Phys & Astron, POB 2455, Riyadh 11451, Saudi ArabiaKing Saud Univ, Coll Sci, Dept Phys & Astron, POB 2455, Riyadh 11451, Saudi Arabia
Nowadays, the electromagnetic interference (EMI) shielding materials with an excellent electrical features, favorable flexibility and low density are the admirable desires that represent great challenges. Therefore, n-type bismuth telluride nanorods with diameter of 41.3 +/- 5 nm (n-Bi2Te3) were incorporated into a p-type poly(3,4-ethylene-dioxythiophene):poly (styrenesulphonate) (p-PEDOT:PSS) to fabricate a (p-PEDOT:PSS/n-Bi2Te3) films for the electromagnetic interference shielding applications for the first time. Besides, the impact of n-Bi2Te3 nanorods on the electrical conductivity and the electromagnetic interference (EMI) shielding functions of p- PEDOT:PSS/n-Bi2Te3 films has been explored. The electrical conductivity (sigma) has gradually increased with the n-Bi2Te3 nanorods in the shield films to obtain the highest value of 106.73 +/- 6 S/cm at 16 wt%. Moreover, the total shielding effectiveness (SET) has also dramatically increased with the n-Bi2Te3 nanorods to obtain the highest value of 42.02 dB at 12 GHz for 16 wt%. The reflection mode is the dominance contribution in the shielding effectiveness process, presenting a good reflector of EM waves. Furthermore, the shield films have displayed a high mechanical performance with young modulus of 1.9 +/- 0.3 GPa and tensile strength of 42.5 +/- 5 MPa at 16 wt%. It can be suggested that these p-PEDOT:PSS/n-Bi2Te3 shields can be functionalized in many fields like electromagnetic shielding interference technology, military, electronic, smart fabric, wearable and biological apparatuses.
机构:
GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Kim, Wan Sik
Anoop, Gopinathan
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Anoop, Gopinathan
Jeong, Il-Seok
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Jeong, Il-Seok
Lee, Hye Jeong
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Lee, Hye Jeong
Kim, Hyun Bin
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KAERI, Jeongeup 56212, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Kim, Hyun Bin
Kim, Soo Hyeon
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KBSI, Biol Disaster Anal Grp, Daejeon 34133, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Kim, Soo Hyeon
Goo, Gi Won
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Goo, Gi Won
Lee, Hyunmyung
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Lee, Hyunmyung
Lee, Hyeon Jun
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Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
Univ Wisconsin, Mat Sci Program, Madison, WI 53706 USAGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Lee, Hyeon Jun
Kim, Chingu
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Kim, Chingu
Lee, Joo-Hyoung
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Lee, Joo-Hyoung
Mun, Bongjin Simon
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GIST, Dept Phys & Photon Sci, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Mun, Bongjin Simon
Park, Ji-Woong
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Park, Ji-Woong
Lee, Eunji
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea
Lee, Eunji
Jo, Ji Young
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GIST, Sch Mat Sci & Engn, Gwangju 61005, South KoreaGIST, Sch Mat Sci & Engn, Gwangju 61005, South Korea