Numerical optimization of dielectric properties to achieve process uniformity in capacitively coupled plasma reactors

This paper presents the results of our numerical analysis to optimize the dielectric properties to achieve process uniformity in the thin film deposition process using capacitively coupled plasma. The difference in the plasma density distribution was analyzed by changing the wafer material from silicon to quartz (or Teflon). Similarly, aluminum was compared with aluminum nitride as the electrode material, and the sidewall material was varied from quartz to a perfect dielectric to study the effect on the plasma characteristics. A two-dimensional self-consistent fluid model was used to analyze the spatial distribution of the plasma parameters. In terms of the process conditions, the gas pressure was set to 400 Pa, the input power was fixed to 100 W, and a radio frequency of 13.56 MHz was used. SiH4/Ar was used as the gas mixture, and these conditions were used as input for numerical simulations of the deposition state of the hydrogenated amorphous silicon layer. The radial spatial distribution of plasma parameters was confirmed to be modified by dielectric elements with low dielectric constants regardless of the type of element. Despite the thin wafer thickness, the use of a wafer with low permittivity weakens the electric field near the electrode edge due to the stronger surface charging effect. Additionally, by changing the material of the sidewall to a perfect dielectric, a more uniform distribution of plasma could be obtained. This is achieved as the peak values of the plasma parameters are located away from the wafer edge. Interestingly, the case in which half of the sidewall was specified as comprising a perfect dielectric and the other half quartz had a more uniform distribution than the case in which the sidewalls consisted entirely of a perfect dielectric.