Spin Magnetoresistance of Thin-Film Structures Made of Manganite and Material with Strong Spin-Orbital Interaction

被引：0
|
作者：
Ulev, G. D. [1 ,2 ]
Constantinian, K. Y. [1 ]
Moskal', I. E. [2 ]
Ovsyannikov, G. A. [1 ]
Shadrin, A. V. [1 ,3 ]
机构：
[1] Russian Acad Sci, Kotelnikov Inst Radioengn & Elect, Moscow 125009, Russia
[2] Natl Res Univ, Higher Sch Econ, Moscow 101000, Russia
[3] Natl Res Univ, Moscow Inst Phys & Technol, Dolgoprudnyi 141701, Moscow Oblast, Russia
来源：
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 2023年 / 68卷 / 10期
基金：
俄罗斯科学基金会;
关键词：
Crystal symmetry - Manganites - Spin Hall effect;
D O I：
10.1134/S1064226923100194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents the results of experimental determination of the spin Hall angle in a Pt/La0.7Sr0.3MnO3 bilayer metal/ferromagnetic structure inferred from angular dependences of longitudinal and transverse spin magnetoresistance in configuration of the planar Hall effect. The value of the spin Hall angle determined from the longitudinal magnetoresistance is theta(Hx) approximate to 0.016, and that from the transverse magnetoresistance is theta(Hy) approximate to 0.018, whereas for SrIrO3/La0.7Sr0.3MnO3 heterostructures the ratio of values of the transverse spin Hall angle to the longitudinal one appears to be substantially higher, theta(Hy)/theta(Hx) approximate to 9, which is apparently caused by a layer with a high spin conductance formed at the SrIrO3/La0.7Sr0.3MnO3 interface.
引用
收藏
页码：1201 / 1205
页数：5
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