Effect of memory behavior on electric-field-induced phase transition and electrocaloric response in antiferroelectric ceramics

被引:2
|
作者
Li, Junjie [1 ,3 ]
Yin, Ruowei [2 ,3 ]
Hou, Yuxuan [2 ,3 ]
Su, Xiaopo [2 ,3 ]
Zhuo, Fangping [4 ]
Li, Jianting [5 ]
Zhang, Xing [1 ]
Wu, Wenjuan [1 ]
Li, Lezhong [1 ]
Bai, Yang [2 ,3 ]
机构
[1] Chengdu Univ Informat Technol, Coll Optoelect Engn, Sichuan Prov Key Lab Informat Mat & Devices Applic, Chengdu 610225, Peoples R China
[2] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing 100083, Peoples R China
[3] Univ Sci & Technol Beijing, Inst Adv Mat & Technol, Beijing 100083, Peoples R China
[4] Tech Univ Darmstadt, Dept Mat & Earth Sci, D-64287 Darmstadt, Germany
[5] Qilu Univ Technol, Shandong Acad Sci, Sch Mech Engn, Jinan 250353, Peoples R China
基金
中国国家自然科学基金;
关键词
ROOM-TEMPERATURE; PERFORMANCE;
D O I
10.1063/5.0155071
中图分类号
O59 [应用物理学];
学科分类号
摘要
Field-induced phase transition in antiferroelectric (AFE) materials always facilitates giant positive/negative electrocaloric (EC) responses for a promising cooling application, while it is not only associated with external field conditions but also applied field history, i.e., memory behavior. Herein, we demonstrate that memory behavior increases the likelihood of observing an EC response when the operating field is parallel to the pre-poling field, as compared to the antiparallel condition. Additionally, when the temperature is slightly above the AFE-ferroelectric (FE) phase transition temperature, the field-off process induces a two-step microstructure change, characterized by a rapid domain rotation followed by a slow phase transition, which finally produces an abnormal EC heat flow signal. Through a Landau theory analysis, this kinetic behavior is contributed to the competition between the ferroelectric (FE) order pinned by memory behavior and the thermal agitation favored AFE state. This work deepens the understanding of the phase transition in the ferroelectric system.
引用
收藏
页数:6
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