Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

被引：2

作者：

Lin, Yu-Chung ^{[1
]}

Lo, Ikai ^{[1
]}

Tsai, Cheng-Da ^{[1
]}

Wang, Ying-Chieh ^{[2
]}

Huang, Hui-Chun ^{[3
]}

Li, Chu-An ^{[3
]}

Chou, Mitch M. C. ^{[3
]}

Chang, Ting-Chang ^{[1
]}

机构：

[1] Natl Sun Yat sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

来源：

NANOMATERIALS | 2023年 / 13卷 / 13期

关键词：

full-color GaN micro-LEDs; InxGa1-xN-based quantum wells (QW); plasma-assisted molecular beam epitaxy (PAMBE); SEMICONDUCTORS;

D O I：

10.3390/nano13131922

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Red, green, and blue light InxGa1-xN multiple quantum wells have been grown on GaN/& gamma;-LiAlO2 microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for InxGa1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (InxGa1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful InxGa1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.

引用

页数：11

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