Multiple-Layer Triangular Defects in 4H-SiC Homoepitaxial Films Grown by Chemical Vapor Deposition

被引：0

作者：

Pei, Yicheng ^{[1
,2
]}

Yuan, Weilong ^{[1
,2
]}

Guo, Ning ^{[2
,3
]}

Li, Yunkai ^{[2
,3
]}

Zhang, Xiuhai ^{[1
]}

Liu, Xingfang ^{[2
,3
,4
]}

机构：

[1] Guangxi Univ, Sch Resources Environm & Mat, Nanning 530004, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[4] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China

来源：

CRYSTALS | 2023年 / 13卷 / 07期

基金：

中国国家自然科学基金;

关键词：

silicon carbide; extension; triangular defect; EPITAXIAL-GROWTH; SILICON-CARBIDE; GRAPHENE;

D O I：

10.3390/cryst13071056

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this study, a special triangular defect (TD) was identified on 4H-SiC epitaxial wafers. The morphology and composition characteristics of these special TDs were revealed by Raman, atomic force microscope (AFM), and scanning electron microscope (SEM). Compared to ordinary triangular defects, this defect protruded from the epitaxial layer and exhibited a laminated shape. The study also discussed the effects of several factors, such as C/Si ratio and growth time, on the triangular defects. Through analysis of these results, we developed methods to suppress the triangular defects. This research provides new insights into the morphology, structure, and composition of this serious destructive defect and is helpful for improving the performance of SiC epitaxial wafers.

引用

页数：11

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