Curing performance and print accuracy of oxidized SiC ceramic via vat photopolymerization

被引:14
|
作者
Dong, Wencai [1 ,2 ]
Bao, Chonggao [1 ]
Li, Hao [2 ]
Liu, Rongzhen [1 ,2 ]
Li, Shijia [1 ]
Ma, Haiqiang [3 ]
机构
[1] Xi An Jiao Tong Univ, Sch Mat Sci & Engn, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China
[2] Natl Inst Corp Addit Mfg, Xian 710117, Shaanxi, Peoples R China
[3] Anhui Polytech Univ, Ctr Adv Ceram, Sch Mat Sci & Engn, Wuhu 241000, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
Vat photopolymerization; Print accuracy; Curing performance; SiC ceramic; SILICON-CARBIDE; LIGHT-SCATTERING; SLURRY; MATRIX; TEMPERATURE; SUSPENSIONS; BEHAVIOR; DEPTH; WIDTH;
D O I
10.1016/j.ceramint.2023.06.176
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
To improve the print quality of SiC ceramic, an amorphous SiO2 layer is prepared on the surface of SiC by oxidation (SiC@SiO2). The changes in curing depth and width direction of SiC@SiO2 curing sheets with different degrees of oxidation were investigated. The results showed that curing depth increased while curing width decreased with an increasing degree of oxidation. The edge morphologies of SiC@SiO2 curing sheets changed from serration to flat shape with increasing degree of oxidation, and uneven overcuring regions appear in the width direction. Additionally, 12% SiC@SiO2 ceramic was fabricated via vat photopolymerization combined with reaction sintering. The dimensional deviation ratio of printed green bodies increased with decreasing printed line width and pore diameter. The minimum printed line width of 329 mu m and pore diameter of 483 mu m with good print quality were obtained. Furthermore, the flexural strength of 225.4 MPa and bulk density of 2.77 g cm-3 for sintered 12% SiC@SiO2 parts were obtained.
引用
收藏
页码:29595 / 29606
页数:12
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