Origin of the decompression driven superconductivity enhancement in SnSe2

被引:2
|
作者
Zhang, Shihui [1 ,2 ]
Susilo, Resta A. [3 ]
Wan, Shun [2 ]
Deng, Wen [2 ]
Chen, Bin [2 ,4 ]
Gao, Chunxiao [1 ]
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Ctr High Pressure Sci & Technol Adv Res, Shanghai 201203, Peoples R China
[3] Pohang Univ Sci & Technol, Dept Phys, Pohang, South Korea
[4] Harbin Inst Technol, Sch Sci, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
ELECTRONIC STRUCTURAL EVOLUTIONS; PRESSURE; TEMPERATURE; LATTICE;
D O I
10.1039/d3tc01501g
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin diselenide (SnSe2) is a typical layered material of the main-group metaldichalcogenides, and exhibits superconductivity under pressure. In this work, the enhanced superconductivity of SnSe2 is reported in decompression and the key mechanism behind the decompression driven superconductivity enhancement is revealed. We explore SnSe2, transforming into superconductivity at & SIM;22 GPa, above which the superconductivity is robust up to 42.8 GPa. Interestingly, when the pressure gradually decreases to 14.0 GPa, the T-c increases monotonously from 6.0 K to 7.9 K. The observed unusual evolution of superconductivity was explained by a combination of pressure-manipulated carrier concentration and phonon softening during decompression by both experimental and theoretical studies. First-principles calculations reveal that interlayer Se-Se bonding is responsible for the series of changes. Our results demonstrate that interlayer coupling is critical for the superconductive behavior of the layered main-group metal dichalcogenides and provides a new platform to study the compressed superconductivity of layered compounds at low pressures.
引用
收藏
页码:12254 / 12260
页数:7
相关论文
共 50 条
  • [31] Indium-Doped Crystals of SnSe2
    Ni, Danrui
    Xu, Xianghan
    Zhu, Zheyi
    Ozbek, Yasemin
    Trontl, Vesna Miksic
    Yang, Chen
    Yang, Xiao
    Louat, Alex
    Cacho, Cephise
    Ong, N. P.
    Zhang, Pengpeng
    Valla, Tonica
    Cava, Robert J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2024, 128 (26): : 11054 - 11062
  • [32] REFLECTIVITY AND BAND-STRUCTURE OF SNSE2
    BERTRAND, Y
    DIVRECHY, A
    RAISIN, C
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (20): : 4155 - 4161
  • [33] The enhanced photoelectrochemical response of SnSe2 nanosheets
    Fang, Zhen
    Hao, Shenghua
    Long, Liuyang
    Fang, Hui
    Qiang, Tingting
    Song, Yixuan
    CRYSTENGCOMM, 2014, 16 (12): : 2404 - 2410
  • [34] ENERGY BAND STRUCTURE OF SNSE2 CRYSTALS
    SOBOLEV, VV
    DONETSKICH, VI
    PHYSICA STATUS SOLIDI, 1970, 42 (01): : K53 - +
  • [35] THERMOREFLECTANCE MEASUREMENTS ON SNS2 AND SNSE2
    BREBNER, JL
    PERLUZZO, G
    CANADIAN JOURNAL OF PHYSICS, 1982, 60 (06) : 915 - 918
  • [36] Synthesis and characterization of SnSe2 hexagonal nanoflakes
    Liu, Kegao
    Liu, Hong
    Wang, Jiyang
    Feng, Liming
    MATERIALS LETTERS, 2009, 63 (05) : 512 - 514
  • [37] Electrical properties of SnSe2 thin films
    Hady, DA
    Soliman, H
    El-Shazly, A
    Mahmoud, MS
    VACUUM, 1999, 52 (04) : 375 - 381
  • [38] ELECTROREFLECTION OF SnSe2 SINGLE CRYSTALS.
    Bletskan, D.I.
    Gavrilenko, V.I.
    Zuev, V.A.
    Kopinets, I.F.
    Litovchenko, V.G.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1975, 9 (10): : 1321 - 1322
  • [39] SEMICONDUCTING PROPERTIES OF SNSE2 AND GESE2
    ASANABE, S
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (09) : 1789 - &
  • [40] Spacing dependent and cation doping independent superconductivity in intercalated 1T 2D SnSe2
    Wu, Hanlin
    Li, Sheng
    Susner, Michael
    Kwon, Sunah
    Kim, Moon
    Haugan, Timothy
    Lv, Bing
    2D MATERIALS, 2019, 6 (04):