Atomic-scale machine learning for modelling memory devices

被引：0

作者：

不详

机构：

来源：

NATURE ELECTRONICS | 2023年 / 6卷 / 10期

关键词：

CRYSTALLIZATION;

D O I：

10.1038/s41928-023-01031-w

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Machine-learning-driven atomistic simulations are shown to describe phase-change materials on the length scale of real devices. This demonstration suggests that the atomic-scale design of phase-change architectures, programming conditions and full devices could be within reach.

引用

页码：726 / 727

页数：2

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