Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

被引:9
|
作者
Chen, Chen [1 ,2 ]
Wei, Fang [2 ,3 ]
Han, Xiuyou [1 ]
Su, Qingshuai [2 ]
Pi, Haoyang [2 ]
Xin, Guofeng [2 ]
Wu, Huimin [2 ]
Stroganov, Anton [4 ]
Sun, Yanguang [2 ]
Ren, Weijie [2 ]
Chen, Xiao [2 ]
Ye, Qing [2 ]
Cai, Haiwen [3 ]
Chen, Weibiao [2 ]
机构
[1] Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[3] ZhangJiang Lab, Shanghai 201210, Peoples R China
[4] LIGENTEC SA, EPFL Innovat Pk, CH-1024 Ecublens, Switzerland
基金
中国国家自然科学基金; 上海市自然科学基金;
关键词
SEMICONDUCTOR-LASER; PERFORMANCE;
D O I
10.1364/OE.487850
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have designed and fabricated a hybrid integrated laser source with full C-band wavelength tunability and high-power output. The external cavity laser is composed of a gain chip and a dual micro-ring narrowband filter integrated on the silicon nitride photonic chip to achieve a wavelength tuning range of 55 nm and a SMSR higher than 50 dB. Through the integration of the semiconductor optical amplifier in the miniaturized package, the laser exhibits an output power of 220 mW and linewidth narrower than 8 kHz over the full C-band. Such a high-power, narrow-linewidth laser diode with a compact and low-cost design could be applied whenever coherence and interferometric resolutions are needed, such as silicon optical coherent transceiver module for space laser communication, light detection and ranging (LiDAR). & COPY; 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:26078 / 26091
页数:14
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