Recent Advances on GaN-Based Micro-LEDs

被引：20
|
作者：
Zhang, Youwei [1 ]
Xu, Ruiqiang [1 ]
Kang, Qiushi [2 ]
Zhang, Xiaoli [1 ]
Zhang, Zi-hui [2 ]
机构：
[1] Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangdong Prov Key Lab Informat Photon Technol, Guangzhou 510006, Peoples R China
[2] Guangdong Univ Technol, Sch Integrated Circuits, Guangzhou 510006, Peoples R China
来源：
MICROMACHINES | 2023年 / 14卷 / 05期
关键词：
GaN; micro-LED; non-radiative recombination; EQE; size effect; LIGHT-EMITTING-DIODES; PATTERNED SAPPHIRE SUBSTRATE; FULL-COLOR EMISSION; HIGH-EFFICIENCY; DISPLAY; GROWTH; TEMPERATURE; GREEN; SIZE; RECOMBINATION;
D O I：
10.3390/mi14050991
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
advantages for display, visible-light communication (VLC), and other novel applications. The smaller size of LEDs affords them the benefits of enhanced current expansion, fewer self-heating effects, and higher current density bearing capacity. Low external quantum efficiency (EQE) resulting from non-radiative recombination and quantum confined stark effect (QCSE) is a serious barrier for application of mu LEDs. In this work, the reasons for the poor EQE of mu LEDs are reviewed, as are the optimization techniques for improving the EQE of mu LEDs.
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收藏
页数：19
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