Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga2O3 Schottky Diodes

被引：3

作者：

Yakimov, E. B. ^{[1
,2
]}

Nikolaev, V. I. ^{[2
,3
,4
]}

Pechnikov, A. I. ^{[2
,3
,4
]}

Polyakov, A. Y. ^{[2
]}

Shchemerov, I. V. ^{[2
]}

Vasilev, A. A. ^{[2
]}

Kulanchikov, Y. O. ^{[1
,2
]}

Vergeles, P. S. ^{[1
]}

Yakimov, E. E. ^{[1
]}

Pearton, S. J. ^{[5
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Moscow 142432, Russia

[2] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia

[3] Perfect Crystals LLC, St Petersburg 194223, Russia

[4] Ioffe Inst, St Petersburg 194021, Russia

[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2023年 / 12卷 / 04期

关键词：

RECIPROCITY THEOREM; EPSILON-GA2O3; PHOTODETECTORS; ALPHA-GA2O3; MECHANISM; KAPPA;

D O I：

10.1149/2162-8777/acce6d

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The kappa-Ga2O3 polytype is attracting attention because of its high spontaneous electric polarization, which exceeds that of III-Nitrides. However, little is known of its transport and photoconductive properties. The electron beam induced current gain effect in Schottky barriers prepared on thick films of kappa-Ga2O3 has been studied. It is shown that the gain originates in the depletion region of the Schottky barrier. It is demonstrated that the induced current gain takes place only in some local regions, several which increases with applied bias. Such unusual behavior can be explained by an inhomogeneous distribution of hole traps or by a formation of conductive channels under applied bias.

引用

页数：5

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