Interface-Induced Crystallinity Enhancement of Perovskite Quantum Dots for Highly Efficient Light-Emitting Diodes

被引:1
|
作者
Yang, Kaiyu [1 ,2 ]
Zheng, Jinping [1 ]
Mao, Jinliang [1 ]
Zhao, Haobing [1 ]
Ju, Songman [1 ]
Zhang, QingKai [1 ]
Lin, Zhihan [1 ]
Yu, Yongshen [2 ]
Li, Fushan [1 ,2 ]
机构
[1] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
[2] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
基金
中国国家自然科学基金;
关键词
perovskite quantum dots; light-emitting diodes; interface; crystallinity enhancement; alkali metals; SOLAR-CELLS; NANOCRYSTALS; PASSIVATION; CSPBX3; BR; CL;
D O I
10.1021/acsami.3c07302
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Perovskite quantum dot light-emitting diodes (QLEDs)with highcolor purity and wide color gamut have good application prospectsin the next generation of display technology. However, colloidal perovskitequantum dots (PQDs) may introduce a large number of defects duringthe film-forming process, which is not conducive to the luminous efficiencyof the device. Meanwhile, the disordered film formation of PQDs willform interfacial defects and reduce the device performance. Here,we report an interface-induced crystallinity enhancement (IICE) strategyto increase the crystallinity of PQDs at the hole transport layer(HTL)/PQD interface. As a result, both the Br- vacanciesin the PQD film and the interfacial defects were well passivated andthe leakage current was also suppressed. We achieved QLEDs with amaximum external quantum efficiency (EQE) of 16.45% and current efficiency(CE) of 61.77 cd/A, showing improved performance to more than twicethat of the control devices. The IICE strategy paves a new way toenhance the crystallinity of PQD films, so as to improve the performanceof QLEDs for application in the future display field.
引用
收藏
页码:40062 / 40069
页数:8
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