Compositionally modulated perpendicular magnetic anisotropy in tetragonal MnxAl films
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作者:
Sun, Hongli
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Sun, Hongli
[1
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Zhao, Xupeng
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Dongguan Univ Technol, Int Sch Microelect, Dongguan 523808, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Zhao, Xupeng
[3
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Han, Rongkun
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Han, Rongkun
[1
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Zhang, Chen
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Zhang, Chen
[1
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Liu, Lei
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Liu, Lei
[1
,2
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Qin, Hongrui
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Qin, Hongrui
[1
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Xie, Zhicheng
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Xie, Zhicheng
[1
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Deng, Huixiong
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Deng, Huixiong
[1
,2
]
Pan, Dong
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Pan, Dong
[1
,2
]
Wei, Dahai
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机构:
Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Wei, Dahai
[1
,2
]
Zhao, Jianhua
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Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R ChinaChinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
Zhao, Jianhua
[1
,2
]
机构:
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlatt & Microstruct, POB 912, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100190, Peoples R China
[3] Dongguan Univ Technol, Int Sch Microelect, Dongguan 523808, Peoples R China
Rare-earth-free perpendicularly magnetized L1(0)-MnxAl alloy holds promise for low-cost permanent magnets and high-performance spintronic devices. In this Letter, we report a large-scale modulation of perpendicular magnetic anisotropy (PMA) in MnxAl films by changing the composition x. Through utilizing a lattice-matching B2-CoGa underlayer and optimizing growth conditions, the 30-nm-thick MnxAl films can maintain excellent PMA in a wide composition range (0.7 <= x <= 3). Meanwhile, the crystalline structure and magnetic properties exhibit a strong dependence on the composition with saturation magnetization changing from 443.75 to 20.52 kA/m, coercivity from 0.22 to 5.38 T, and PMA constant up to 1.34 x 10(6) J/m3. Combining experimental and calculation results, we confirm the existence of ferrimagnetic-like state in MnxAl under Mn-rich conditions. Further experiments validate the continued efficacy of our method in ultrathin MnxAl films, and spin-orbit torque induced magnetization switching has been realized. These results offer valuable insights into the modulation of fundamental properties and promote the potential application of MnxAl alloy.