SERS;
Ag dendrites;
Impurity removal;
High temperature annealing;
Atomic layer deposition;
ENHANCED RAMAN-SCATTERING;
SILVER;
NANOSTRUCTURES;
FABRICATION;
DESIGN;
D O I:
10.1016/j.talanta.2023.124502
中图分类号:
O65 [分析化学];
学科分类号:
070302 ;
081704 ;
摘要:
Ag dendrites have recently been widely reported due to their excellent surface-enhanced Raman scattering (SERS) properties. However, prepared pristine Ag dendrites are usually contaminated by organic impurities, which has a huge negative impact on their Raman detection and greatly limits their practical applications. In this paper, we reported a facile strategy to obtain clean Ag dendrites by high temperature decomposition of organic impurities. With the assistance of ultra-thin coating via atomic layer deposition (ALD), the nanostructure of Ag dendrites can be retained at high temperature. SERS activity can be recovered after etching ALD coating. Chemical composition tests indicate that the organic impurities can be effectively removed. As a result, the clean Ag dendrites can obtain more clearly discernible Raman peaks and lower limits of detection than the pristine Ag dendrites. Furthermore, it was demonstrated that this strategy is also applicable to clean other substrates, such as gold nanoparticles. Therefore, high temperature annealing with the help of ALD sacrifice coating is a promising and non-destructive strategy to clean the SERS substrates.
机构:
Northeast Forestry Univ, Coll Comp & Control Engn, Harbin, Peoples R China
Inner Mongolia Minzu Univ, Coll Comp Sci & Technol, Tongliao, Peoples R ChinaNortheast Forestry Univ, Coll Comp & Control Engn, Harbin, Peoples R China
Sun, Xiaoxiong
Zhu, Liangkuan
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机构:
Northeast Forestry Univ, Coll Comp & Control Engn, Harbin, Peoples R ChinaNortheast Forestry Univ, Coll Comp & Control Engn, Harbin, Peoples R China
Zhu, Liangkuan
Liu, Dayang
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机构:
Northeast Forestry Univ, Coll Comp & Control Engn, Harbin, Peoples R ChinaNortheast Forestry Univ, Coll Comp & Control Engn, Harbin, Peoples R China
机构:
Bar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel
Bar Ilan Univ, BIU Ctr Nanotechnol & Adv Mat, IL-5290002 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel
Ohayon, Amit
Girshevitz, Olga
论文数: 0引用数: 0
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机构:
Bar Ilan Univ, BIU Ctr Nanotechnol & Adv Mat, IL-5290002 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel
Girshevitz, Olga
Ejgenberg, Michal
论文数: 0引用数: 0
h-index: 0
机构:
Bar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel
Bar Ilan Univ, BIU Ctr Nanotechnol & Adv Mat, IL-5290002 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel
Ejgenberg, Michal
Radovsky, Gal
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机构:
Bar Ilan Univ, BIU Ctr Nanotechnol & Adv Mat, IL-5290002 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel
Radovsky, Gal
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机构:
Noked, Malachi
Kapaev, Roman R.
论文数: 0引用数: 0
h-index: 0
机构:
Bar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel
Bar Ilan Univ, BIU Ctr Nanotechnol & Adv Mat, IL-5290002 Ramat Gan, IsraelBar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel